NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 300 Volt V
CEO
* 3 Amps continuous current
* Up to 5 Amps peak current
* Very low saturation voltage
*P
tot
= 1.2 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
330 V
Collector-Emitter Voltage V
CEO
300 V
Emitter-Base Voltage V
EBO
6V
Peak Pulse Current I
CM
5A
Continuous Collector Current I
C
3A
Practical Power Dissipation* P
totp
1.58 W
Power Dissipation at T
amb
=25°C P
tot
1.2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
330 475 V
I
C
=100µA
Collector-Emitter Breakdown
Voltag
V
(BR)CER
330 475 V
IC=1
µA, RB ≤1KΩ
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
300 350 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
68 V
I
E
=100µA
Collector Cut-Off Current I
CBO
50
1
nA
µA
V
CB
=300V
V
CB
=300V, T
amb
=100°C
Collector Cut-Off Current I
CER
R ≤1KΩ
50
1
nA
µA
V
CB
=300V
V
CB
=300V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
10 nA V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
50
80
140
170
100
140
200
250
mV
mV
mV
mV
I
C
=0.5A, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=3A, I
B
=600mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
870 1000 mV I
C
=2A, I
B
=200mA*
E-Line
TO92 Compatible
ZTX857
3-303
C
B
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
810 950 mV IC=2A, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
100
100
15
200
200
25
15
300
I
C
=10mA, V
CE
=5V
I
C
=500mA, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
Transition Frequency f
T
80 MHz I
C
=100mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
11 pF V
CB
=20V, f=1MHz
Switching Times t
on
t
off
100
5300
ns
ns
I
C
=250mA, I
B1
=25mA
I
B2
=25mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
ZTX857
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T -Temperature (°C)
M
a
x
P
ower
D
iss
ipa
tion
-
(W
a
tt
s
)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01
4.0
3.0
-20 0 20
40 60 80 100 120 200180160140
t
1
t
P
D=t
1
/t
P
Case te
mperatu
r
e
Ambien
t t
empe
rat
ure
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-304
