Document Number: 94234 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 5.5 A
VS-50WQ06FNPbF
Vishay Semiconductors
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-50WQ06FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
5.5 A
V
R
60 V
V
F
at I
F
See Electrical table
I
RM
35 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
7 mJ
Anode
1
3
Base
cathode
Anode
4, 2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 5.5 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 320 A
V
F
5 Apk, T
J
= 125 °C 0.54 V
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-50WQ06FNPbF UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 132 °C, rectangular waveform 5.5
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
320
10 ms sine or 6 ms rect. pulse 105
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.2 A, L = 10 mH 7 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.8 A
