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BAS70LT1G

P1-P3
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 10
1 Publication Order Number:
BAS70LT1/D
BAS70LT1G,
NSVBAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating
Symbol Value Unit
Forward Current I
F
70 mA
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
I
FSM
100 mA
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−23 (TO−236)
CASE 318
STYLE 8
BE Specific Device Code
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
BAS70LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
70 VOLTS SCHOTTKY
BARRIER DIODES
1
BE M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
NSVBAS70LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
BAS70LT1G, NSVBAS70LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
70 −
V
Total Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
T
− 2.0
pF
Reverse Leakage
(V
R
= 50 V)
(V
R
= 70 V)
I
R
−
−
0.1
10
mA
Forward Voltage
(I
F
= 1.0 mA)
V
F
− 410
mV
Forward Voltage
(I
F
= 10 mA)
V
F
− 750
mV
Forward Voltage
(I
F
= 15 mA)
V
F
− 1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
100
0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0 10 15 20
50
1.4
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.2
0.4
0.2
0
C
T
, CAPACITANCE (pF)
5.0 10 15 50
I
F
, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40°C
25°C
T
A
= 150°C
25°C
I
R
, REVERSE CURRENT (μA)
1.0
-55°C
125°C
150°C
100
25
20
0.6
0.8
1.0
0.6 0.7
125°C
85°C
30 35 40 45
25
30 35 40
45
0.8 0.9
BAS70LT1G, NSVBAS70LT1G
www.onsemi.com
3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.027
c
0 −−− 10 0 −−− 10
T
°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X
0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BAS70LT1/D
LITERATURE FULFILLMENT:
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19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
◊
P1-P3

BAS70LT1G

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Buy BAS70LT1G
Manufacturer:
ON Semiconductor
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Schottky Diodes & Rectifiers 70V 225mW Single
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