TIP101-BP

TIP100
TIP101
TIP102
NPN Plastic
Medium-Power
Silicon Transistors
Features
High DC Current Gain : h
FE
=2500 (Typ) @ I
C
=4.0Adc
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Maximum Ratings
Symbol Parameter Rating Unit
V
CEO
Collector-Emitter Voltage
TIP100
TIP101
TIP102
60
80
100
V
V
CBO
Collector-Base Voltage TIP100
TIP101
TIP102
60
80
100
V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current-continuous 8.0 A
I
CP
Collector Current-peak 15 A
I
B
Base Current 1.0 A
P
D
Collector Dissipation @T
C
=25
O
C
Derate above 25
O
C
80
0.64
W
W/
O
C
T
J
, Junction Temperature -55 to +150
O
C
T
STG
Storage Temperature -55 to +150
O
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
(I
C
=30mAdc, I
B
=0) TIP100
TIP101
TIP101
60
80
100
---
---
---
Vdc
I
CEO
Collector Cut-off Current
(V
CE
=30Vdc, I
B
=0) TIP100
(V
CE
=40Vdc, I
B
=0) TIP101
(V
CE
=50Vdc, I
B
=0) TIP102
---
---
---
50
50
50
uAdc
I
CBO
Collector Cut-off Current
(V
CB
=60Vdc, I
E
=0) TIP100
(V
CB
=80Vdc, I
E
=0) TIP101
(V
CB
=100Vdc, I
E
=0) TIP102
---
---
---
50
50
50
uAdc
I
EBO
Emitter Cut-off Current
(V
BE
=5.0Vdc, I
C
=0) --- 8.0 mAdc
ON CHARACTERISTICS(1)
h
FE(1)
DC Current Gain
(I
C
=3.0Adc, V
CE
=4.0Vdc)
(I
C
=8.0Adc, V
CE
=4.0Vdc)
1000
200
20000
---
----
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=3.0Adc, I
B
=6.0mAdc)
(I
C
=8.0Adc, I
B
=80mAdc)
---
---
2.0
2.5 Vdc
V
BE(ON)
Base-Emitter On Voltage
(I
C
=8.0Adc,V
CE
=4.0Adc) --- 2.8 Vdc
hfe Small-Signal Current Gain
(I
C
=3.0Adc,V
CE
=4.0Vdc,f=1.0MHz) 4.0 --- ---
C
ob
Output Capacitance
(V
CB
=10V, I
E
=0, f=0.1MHz) --- 200 pF
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
TO-220
omponents
20736 Marilla Street Chatsworth

 !"#
$%  !"#
MCC
Revision: C 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
G
R
B
Q
H
U
L
C
J
K
A
F
S
T
1
3
2
V
MIN MAX NOTE
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56 4.82
D .020 .045 0.51 1.14
F .139 .161 3.53 4.09
G .190 .110 2.29 2.79
H --- .250 --- 6.35
J .012 .025 0.30 0.64
K .500 .580 12.70 14.73
L .045 .060 1.14 1.52
N .190 .210 4.83 5.33
Q .100 .135 2.54 3.43
R .080 .115 2.04 2.92
S .045 .055 1.14 1.39
T .230 .270 5.84 6.86
U ----- .050 ----- 1.27
V .045 ----- 1.15 -----
DIMENSIONS
INCHES MM
DIM MIN MAX
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mounting Torgue: 5 in-lbs Maximum
Halogen free available upon request by adding suffix "-HF"
80
0
0 20 40 60 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (
°
C)
P
D
, POWER DISSIPATION (WATTS)
40
20
60
140
T
C
4.0
0
2.0
1.0
3.0
T
A
T
A
T
C
5.0
0.1
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t, TIME ( s)
µ
2.0
1.0
0.5
0.05
0.2 0.3 0.5 0.7 1.0 2.0 3.0 10
0.3
0.7
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0 V
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
3.0
0.2
0.1
0.07
5.0 7.0
Figure 3. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
θ
JC(t)
= r(t) R
θ
JC
R
θ
JC
= 1.56
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
Z
θ
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
20
1.0
Figure 4. Active–Region Safe Operating Area
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0 5.0 20 50 10
0
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
0.5
I
C
, COLLECTOR CURRENT (mA)
T
J
= 150
°
C
dc
1ms
100
µ
s
0.2
0.1
10
TIP102
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
5ms
TIP100,101,102
MCC
TIP101
TIP100
Revision: C 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
300
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
30
2.0 5.0 10 20 10
0
500.2 0.5 1.0
C, CAPACITANCE (pF)
100
50
T
J
= 25
°
C
C
ib
70
C
ob
Figure 5. Small–Signal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20 50 100 200 10002.0 5.0 10
3000
500
100
T
C
= 25
°
C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
1000
Figure 6. Capacitance
50
500
h
fe
, SMALL–SIGNAL CURRENT GAIN
5000
2000
300
200
30
20
200
20,000
0.1
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (AMP)
200
0.2 0.3 0.5 1.0 2.0 10
500
1000
300
h
FE
, DC CURRENT GAIN
2000
3000
V
CE
= 4.0 V
0.7 3.0
10,000
5000
T
J
= 150
°
C
25
°
C
–55
°
C
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Saturation Region
3.0
0.3
I
B
, BASE CURRENT (mA)
1.0
0.5 1.0 2.0 10 30
1.8
I
C
= 2.0 A
T
J
= 25
°
C
4.0 A
2.2
2.6
0.7 5.0 20
1.4
6.0 A
3.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 250
V
CE(sat)
@ I
C
/I
B
= 250
V, VOLTAGE (VOLTS)
Figure 9. “On” Voltages
V
BE
@ V
CE
= 4.0 V
3.00.7 7.0
TIP100,101,102
MCC
Revision: C 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
3 of 4

TIP101-BP

Mfr. #:
Manufacturer:
Micro Commercial Components (MCC)
Description:
Bipolar Transistors - BJT 8.0A 80V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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