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SQD50N10-8m9L_GE3

P1-P3P4-P6P7-P9P10-P10
SQD50N10-8m9L
www.vishay.com
Vishay Siliconix
S13-0875-Rev. A, 22-Apr-13
1
Document Number: 62778
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
() at V
GS
= 10 V 0.0089
R
DS(on)
() at V
GS
= 4.5 V 0.0112
I
D
(A) 50
Configuration Single
TO-252
S
G
Top View
Drain Connected to Tab
D
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TO-252
Lead (Pb)-free and Halogen-free SQD50N10-8m9L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
a
I
D
50
A
T
C
= 125 °C 49
Continuous Source Current (Diode Conduction)
a
I
S
50
Pulsed Drain Current
b
I
DM
200
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
43
Single Pulse Avalanche Energy E
AS
92 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
136
W
T
C
= 125 °C 45
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
50
°C/W
Junction-to-Case (Drain) R
thJC
1.1
SQD50N10-8m9L
www.vishay.com
Vishay Siliconix
S13-0875-Rev. A, 22-Apr-13
2
Document Number: 62778
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 100 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 100 V - - 1
μA V
GS
= 0 V V
DS
= 100 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 100 V, T
J
= 175 °C - - 500
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 50 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 15 A - 0.0071 0.0089
V
GS
= 10 V I
D
= 15 A, T
J
= 125 °C - - 0.0151
V
GS
= 10 V I
D
= 15 A, T
J
= 175 °C - - 0.0187
V
GS
= 4.5 V I
D
= 10 A - 0.0089 0.0112
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A - 67 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 2340 2950
pF Output Capacitance C
oss
- 1441 1810
Reverse Transfer Capacitance C
rss
- 124 160
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 50 V, I
D
= 50 A
-4670
nC Gate-Source Charge
c
Q
gs
-7.5-
Gate-Drain Charge
c
Q
gd
-10-
Gate Resistance R
g
f = 1 MHz 6 12.3 18.5
Turn-On Delay Time
c
t
d(on)
V
DD
= 50 V, R
L
= 1
I
D
50 A, V
GEN
= 10 V, R
g
= 1
-1218
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
- 95 145
Fall Time
c
t
f
- 120 180
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 200 A
Forward Voltage V
SD
I
F
= 15 A, V
GS
= 0 V - 0.8 1.5 V
SQD50N10-8m9L
www.vishay.com
Vishay Siliconix
S13-0875-Rev. A, 22-Apr-13
3
Document Number: 62778
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
100
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
0
25
50
75
100
125
0 10 20 30 40 50
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
800
1600
2400
3200
4000
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
C
0.000
0.003
0.006
0.009
0.012
0.015
0 20 40 60 80 100
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 10 20 30 40 50
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 50 A
V
DS
= 50 V
P1-P3P4-P6P7-P9P10-P10

SQD50N10-8m9L_GE3

Mfr. #:
Buy SQD50N10-8m9L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V 50A 45watt AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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