IRSF3031LTR

Data Sheet No. PD 60069-H
Description
The IRSF3031 is a three-terminal monolithic Smart Power
MOSFET with built-in short circuit, over-temperature, ESD and
over-voltage protections and dual set/reset input threshold .
The on-chip protection circuit latches off the Power MOSFET
in case the drain current exceeds 4A (typical) or the junction
temperature exceeds 165
o
C (typical) and keeps it off until the
input is driven below the Reset Threshold voltage.
The drain to source voltage is actively clamped at 55V prior to
the avalanche of the Power MOSFET, thus improving its perfor-
mance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which
makes the IRSF3031 compatible with most existing designs
based on standard power MOSFETs.
FULLY PROTECTED POWER MOSFET SWITCH
Features
Controlled slew rate reduces EMI
Over temperature protection
Over current protection
Active drain-to-source clamp
ESD protection
Lead compatible with standard Power MOSFET
Low operating input current
Monolithic construction
Dual set/reset threshold input
Applications
Solenoid Driver
DC Motor Driver
Programmable Logic Controller
Packages
IRSF3031 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
3 Lead
SOT-223
3 Lead
TO220AB
Block Diagram
Drain
Source
Q
Q
+
-
Vref
R
S
T
j
+
Input
1V
3.5V
-
-
+
Bias & Ref
Ground
Isolation
+
-
DRAIN
SOURCE
INPUT
V
ds(clamp)
50 V
R
ds(on)
200 m
I
ds(sd)
4 A
T
j(sd)
165
o
C
E
AS
200 mJ
Product Summary
www.irf.com 1
IRSF3031
2 www.irf.com
N
OTES:
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.
E
AS
is tested with a constant current source of 6A applied for 700µS with V
in
= 0V and starting T
j
= 25
o
C.
Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is
forward biased.
Static Electrical Characteristics
(T
c
= 25
o
C unless otherwise specified.)
Symbol Parameter Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain to source clamp voltage 50 56 65 V I
ds
= 2A
R
ds(on)
Drain to source on resistance 155 200 m V
in
= 5V, I
ds
= 2A
I
dss
Drain to source leakage current 250
µ
AV
ds
= 40V, V
in
= 0V
V
set
Input threshold voltage 2.5 3.2 4.0 V V
ds
= 5V, I
ds
> 10mA
V
reset
Input protection reset threshold voltage 0.5 1.0 1.5 V V
ds
= 5V, I
ds
< 10
µ
A
I
i,on
Input supply current (normal operation) 100 300
µ
AV
in
= 5V
I
i,off
Input supply current (protection mode) 120 400
µ
AV
in
= 5V
V
in, clamp
Input clamp voltage 9 10 V I
in
= 1mA
V
sd
Body-drain diode forward drop 1.5 V I
ds
= -2A, R
in
= 1k
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
thjc
Thermal resistance, junction-to-case 4
o
C/W TO-220AB
R
thja
Thermal resistance, junction-to-ambient 60
R
thjc
Thermal resistance, junction-to-case 40
o
C/W SOT-223
R
thja
Thermal resistance, junction-to-PCB ——60
Thermal Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T
c
=
25
o
C unless otherwise specified.)
Symbol Parameter Min. Max. Units Test Conditions
V
ds, max
Continuous drain to source voltage 50
V
V
in, max
Continuous input voltage -0.3 10
I
ds
Continuous drain current self limited A
P
d
Power dissipation 30 W T
c
25
o
C, TO220
3.0 W T
c
25
o
C, SOT223
E
AS
Unclamped single pulse inductive energy 200 mJ
V
esd1
Electrostatic discharge voltage (Human Body Model) 4000
V
100pF. 1.5k
V
esd2
Electrostatic discharge voltage (Machine Model) 1000 200pF, 0
T
Jop
Operating junction temperature range -55
150
T
Stg
Storage temperature range -55 150
o
C
T
L
Lead temperature (soldering, 10 seconds) 300
IRSF3031
www.irf.com 3
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 10, R
in
= 100. Specifications measured at T
C
= 25
o
C unless otherwise
specified.)
Symbol Parameter Min. Typ. Max. Units Test Conditions
t
don
Turn-on delay time 30 V
in
= 2V to 5V, 50% to 90%
t
r
Rise time 30
µ
s
V
in
= 2V to 5V, 90% to 10%
t
doff
Turn-off delay time 30 V
in
= 5V to 2V, 50% to 10%
t
r
Fall time 30 V
in
= 5V to 2V, 10% to 90%
SR Output positive slew rate -6 6
V/
µ
s
V
in
= 2V to 5V, +dVds/dt
SR Output negative slew rate -6 6 V
in
= 5V to 2V, -dVds/dt
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
ds(sd)
Current limit 1.8 4 6 A Vin = 5V
T
j(sd)
Over temperature shutdown threshold 155 165
o
C Vin = 5V, Ids = 2A
V
protect
Min. input voltage for over-temp function 3 V
t
Iresp
Over current response time TBD
µ
s
I
peak
Peak short circuit current TBD A
t
reset
Protection reset time TBD
µs
t
Tresp
Over-temperature response time TBD
Lead Assignments
Part Number
(2) D
1 2 3
In D S
3 Lead - SOT223
IRSF3031L
1 2 3
In D S
3 Lead - TO220
2 (D)
IRSF3031

IRSF3031LTR

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRVR LO SIDE 50V 1.8A SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
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