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NTR1P02T3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 8
1 Publication Order Number:
NTR1P02T1/D
NTR1P02, NVR1P02
Power MOSFET
−20 V, −1 A, P−Channel SOT−23 Package
Features
• Ultra Low On−Resistance Provides Higher Efficiency
and Extends Battery Life
R
DS(on)
= 0.180 W, V
GS
= −10 V
R
DS(on)
= 0.280 W, V
GS
= −4.5 V
• Power Management in Portable and Battery−Powered Products
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Mounting Information for SOT−23 Package Provided
• NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage − Continuous V
GS
±20 V
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤ 1 ms)
I
D
I
DM
−1.0
−2.67
A
Total Power Dissipation @ T
A
= 25°C P
D
400 mW
Operating and Storage Temperature Range T
J
, T
stg
− 55 to
150
°C
Thermal Resistance; Junction−to−Ambient
R
q
JA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
G
S
Device Package Shipping
†
ORDERING INFORMATION
P−Channel
−20 V
148 mW @ −10 V
R
DS(on)
TYP
−1.0 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
P2 = Specific Device Code
M = Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
3
1
3
Drain
1
Gate
2
Source
P2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
M
NTR1P02T1G SOT−23
(Pb−Free)
3000 / Tape & Reel
NTR1P02T3G SOT−23
(Pb−Free)
10000 / Tape & Ree
l
NVR1P02T1G SOT−23
(Pb−Free)
3000 / Tape & Reel
www.onsemi.com
NTR1P02, NVR1P02
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 V, I
D
= −10 mA)
(Positive Temperature Coefficient)
V
(BR)DSS
−20
32
V
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= −20 V, V
GS
= 0 V, T
J
= 25°C)
(V
DS
= −20 V, V
GS
= 0 V, T
J
= 150°C)
I
DSS
−1.0
−10
mA
Gate−Body Leakage Current (V
GS
= ±20 V, V
DS
= 0 V) I
GSS
±100 nA
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= −250 mA)
(Negative Temperature Coefficient)
V
GS(th)
−1.1 −1.9
−4.0
−2.3 V
mV/°C
Static Drain−to−Source On−State Resistance
(V
GS
= −10 V, I
D
= −1.5 A)
(V
GS
= −4.5 V, I
D
= −0.75 A)
R
DS(on)
0.148
0.235
0.180
0.280
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= −5 V, V
GS
= 0 V, f = 1.0 MHz)
C
iss
165 pF
Output Capacitance
(V
DS
= −5 V, V
GS
= 0 V, f = 1.0 MHz)
C
oss
110
Reverse Transfer Capacitance
(V
DS
= −5 V, V
GS
= 0 V, f = 1.0 MHz)
C
rss
35
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= −15 V, I
D
= −1 A, V
GS
= −5 V, R
G
= 2.5 W)
t
d(on)
7.0
ns
Rise Time
(V
DD
= −15 V, I
D
= −1 A, V
GS
= −5 V, R
G
= 2.5 W)
t
r
9.0
Turn−Off Delay Time
(V
DD
= −15 V, I
D
= −1 A, V
GS
= −5 V, R
G
= 2.5 W)
t
d(off)
9.0
Fall Time
(V
DD
= −15 V, I
D
= −1 A, V
GS
= −5 V, R
G
= 2.5 W)
t
f
3.0
Total Gate Charge
(V
DS
= −15 V, V
GS
= −5 V, I
D
= −0.8 A)
Q
tot
2.5
nC
Gate−Source Charge
(V
DS
= −15 V, V
GS
= −5 V, I
D
= −0.8 A)
Q
gs
0.75
Gate−Drain Charge
(V
DS
= −15 V, V
GS
= −5 V, I
D
= −0.8 A)
Q
gd
1.0
BODY−DRAIN DIODE RATINGS (Note 1)
Diode Forward On−Voltage (Note 2)
(I
S
= −0.6 A, V
GS
= 0 V)
(I
S
= −0.6 A, V
GS
= 0 V, T
J
= 150°C)
V
SD
−0.8
−0.6
−1.0
V
Reverse Recovery Time
(I
S
= −1 A, dI
S
/dt = 100 A/ms, V
GS
= 0 V)
t
rr
13.5
ns
t
a
10.5
t
b
3.0
Reverse Recovery Stored Charge
(I
S
= −1 A, dI
S
/dt = 100 A/ms, V
GS
= 0 V)
Q
RR
0.008
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
NTR1P02, NVR1P02
www.onsemi.com
3
−4 V
1
1.25
0.75
2
0.5
0.25
0
1.5
0.275
0.25
0.2
0.15
0.1
0.05
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
−I
D
, DRAIN CURRENT (AMPS) −I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
−I
DSS
, LEAKAGE (nA)
2.5
1.5
0.5
0
10
100
1000
0
1.5
1.25
1
0.50.25
0.5
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.1
0.45
0.35
0.30.2
0.25
0.1
0.05
0.6 1
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Temperature
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
2.5
−45 55305−20 80 130105
1421.5
11132
1
0
2
0.2 0.80.60.4 1 1.
6
1.2
155
2
1.5 2.5 3 3.5
V
DS
≥ −10 V
T
J
= 25°C
T
J
= −40°C
T
J
= 125°C
V
GS
= −4.5 V
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
I
D
= −1.5 A
V
GS
= −10 V
V
GS
= −2.5 V
0.8 1.4
−3 V
T
J
= 25°C
V
GS
= −10 V
T
J
= 25°C
T
J
= −40°C
T
J
= 150°C
1
10.75 1.75
−3.5 V
−4.5 V
1.75
1.25
0.75
0.25
2.25
1.75
0.50.4 0.7 0.9
0.15
0.2
0.3
0.4
T
J
= 25°C
T
J
= 150°C
T
J
= −40°C
0.075
0.125
0.225
0.175
1
2
579 13151719
P1-P3P4-P5

NTR1P02T3

Mfr. #:
Buy NTR1P02T3
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 20V 1A SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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