2 - 2
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Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 7.5A Note 2 8 16 S
C
iss
4300 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 360 pF
C
rss
60 pF
t
d(on)
18 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 7.5A 27 ns
t
d(off)
R
G
= 1 W (External), 53 ns
t
f
16 ns
Q
g(on)
90 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 7.5A 20 nC
Q
gd
30 nC
R
thJC
0.50 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 15 A
I
SM
Repetitive, Note 1 60 A
V
SD
I
F
= I
s
, 100A, V
GS
= 0 V, Note 2 1.5 V
t
rr
250 ns
Q
RM
0.8 mC
I
RM
7.5 A
I
F
= I
s
, -di/dt = 100 A/ms, V
R
= 100 V
Note: 1. Pulse width limited by T
JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXFR 15N80Q
ISOPLUS 247 (IXFR) OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025