FDH5500 N-Channel UltraFET Power MOSFET
FDH5500 Rev. A1 www.fairchildsemi.com5
Figure 5.
1 10 100 200
0.1
1
10
100
1000
100us
1ms
10ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
DC
Forward Bias Safe Operating Area
0.01 0.1 1 10 100 1000 5000
1
10
100
1000
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
01234567
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
012345
0
40
80
120
160
V
GS
= 5.5V
V
GS
= 10V
V
GS
= 6V
V
GS
= 4.5V
V
GS
= 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 9.
46810
0
10
20
30
40
I
D
= 75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(mΩ)
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 25
o
C
T
J
= 175
o
C
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
D
= 75A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE(
o
C)
Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
