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DTD743EMT2L

P1-P3P4-P6P7-P7
DTD743EM
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
DTD743E series
NPN 200mA 30V Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
1) Built-In Biasing Resistors, R
1
= R
2
= 4.7kW.
l
Inner circuit
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB743E series
6) Lead Free/RoHS Compliant.
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
8
3,000
M23
DTD743EE
EMT3
1616
TL
180
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
DTD743EM
VMT3
1212
T2L
180
8
8,000
M23
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Parameter
VMT3
EMT3
V
CC
I
C(MAX.)
R
1
R
2
DTD743EM
(SC-105AA)
OUT
IN
GND
OUT
IN
GND
DTD743EE
SOT-416 (SC-75A)
1/6
2012.07 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTD743E series
lAbsolute maximum ratings (Ta = 25°C)
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
V
IN
-10 to +20
V
I
C(MAX.)
*1
200
mA
Parameter
Symbol
Values
Unit
V
CC
30
V
Conditions
Min.
Typ.
mW
T
j
150
°C
T
stg
-55 to +150
°C
P
D
*2
150
Max.
Unit
Input voltage
V
I(off)
V
CC
= 5V, I
O
= 100mA
-
-
V
V
I(on)
V
O
= 0.3V, I
O
= 20mA
2.5
-
-
0.5
Parameter
Symbol
V
Input current
I
I
V
I
= 5V
-
-
1.4
mA
Output voltage
V
O(on)
I
O
/ I
I
= 50mA / 2.5mA
-
0.07
0.3
mA
DC current gain
G
I
V
O
= 2V, I
O
= 100mA
115
-
-
-
Output current
I
O(off)
V
CC
= 30V, V
I
= 0V
-
-
0.5
kW
Resistance ratio
R
2
/R
1
-
0.8
1
1.2
-
Input resistance
R
1
-
3.29
4.7
6.11
MHz
Transition frequency
f
T
*1
V
CE
= 10V, I
E
= -5mA,
f = 100MHz
-
260
-
2/6
2012.07 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTD743E series
lElectrical characteristic curves(Ta = 25°C)
Fig.4 DC current gain vs. output current
Fig.2 Output current vs. input voltage
(OFF characteristics)
0.1
1
10
100
0.1 1 10 100 1000
V
O
= 0.3V
Ta= -40ºC
25ºC
85ºC
125ºC
0.1
1
10
100
0 1 2 3 4
V
CC
= 5V
Ta= 125ºC
85ºC
25ºC
-40ºC
1
10
100
1000
0.1 1 10 100 1000
V
O
= 2V
Ta= 125ºC
85ºC
25ºC
-40ºC
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[mA]
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : V
O
[V]
DC CURRENT GAIN : G
I
OUTPUT CURRENT : I
O
[mA]
0
50
100
150
200
0 5 10
0A
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
1.0mA I
I
=
Ta=25ºC
3/6
2012.07 - Rev.C
P1-P3P4-P6P7-P7

DTD743EMT2L

Mfr. #:
Buy DTD743EMT2L
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased TRANSISTOR
Lifecycle:
New from this manufacturer.
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