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RHRP3060

P1-P3P4-P5
1 Publication Order Number:
RHRP3060/D
©2005 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
RHRP3060 — Hyperfast Diode
RHRP3060
30 A, 600 V Hyperfast Diodes
Features
• Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
• Max Forward Voltage, V
F = 2.1 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
•RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Informations
Part Number Package Brand
RHRP3060 TO-220AC-2L RHRP3060
Description
The RHRP3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are intended to
be used as freewheeling clamping diodes and diodes in a
variety of switching power supplies and other power
switching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
TO-220
1. Cathode 2. Anode
Pin Assignments
Absolute Maximum Ratings
Symbol Parameter RHRP3060 Unit
V
RRM
Peak Repetitive Reverse Voltage 600 V
V
RWM
Working Peak Reverse Voltage 600 V
V
R
DC Blocking Voltage 600 V
I
F(AV)
Average Rectified Forward Current (T
C
= 120C) 30 A
I
FRM
Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A
I
FSM
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
325 A
P
D
Maximum Power Dissipation 125 W
E
AVL
Avalanche Energy (See Figures 10 and 11) 20 mJ
T
J
, T
STG
Operating and Storage Temperature -65 to 175 C
RHRP3060 — Hyperfast Diode
www.onsemi.com
2
Electrical Characteristics T
C
= 25°C unless otherwise noted
Symbol Test Conditions
RHRP3060
Unit
Min. Typ. Max.
V
F
I
F
= 30 A - - 2.1 V
I
F
= 30 A, T
C
= 150C - - 1.7 V
I
R
V
R
= 400 V - - - A
V
R
= 600 V - - 250 A
V
R
= 400 V, T
C
= 150C - - - mA
V
R
= 600 V, T
C
= 150C - - 1.0 mA
t
rr
I
F
= 1 A, dl
F
/dt = 200 A/s - - 40 ns
I
F
= 30 A, dl
F
/dt = 200 A/s - - 45 ns
t
a
I
F
= 30 A, dl
F
/dt = 200 A/s - 22 - ns
t
b
I
F
= 30 A, dl
F
/dt = 200 A/s - 18 - ns
Q
RR
I
F
= 30 A, dl
F
/dt = 200 A/s - 100 - nC
C
J
V
R
= 600 V, I
F
= 0 A - 85 - pF
R
JC
- - 1.2 C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300s, D = 2%)
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
JC
= Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
RHRP3060 — Hyperfast Diode
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Forward Current vs Forward Voltage
V
F
, FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
1
100
10
012
300
34
25
o
C
100C
175C
Figure 2. Reverse Currnt vs Reverse Voltage
V
R
, REVERSE VOLTAGE (V)
0 200 400 600300 500
2000
0.01
0.1
100
10
I
R
, REVERSE CURRENT (μA)
100
1
175C
100C
25C
Figure 3. t
rr
, t
a
and t
b
Curves vs
Forward Current
I
F
, FORWARD CURRENT (A)
1
0
20
10
30
30
50
t, RECOVERY TIMES (ns)
10
40
t
rr
t
a
t
b
T
C
= 25C, dl
F
/dt = 200A/s
Figure 4. t
rr
, t
a
and t
b
Curves vs
Forward Current
I
F
, FORWARD CURRENT (A)
0
40
20
301
60
80
t, RECOVERY TIMES (ns)
10
100
t
rr
t
a
t
b
T
C
= 100C, dl
F
/dt = 200A/s
Figure 5. t
rr
, t
a
and t
b
Curves vs
Forward Current
I
F
, FORWARD CURRENT (A)
0
50
25
30
1
100
75
t, RECOVERY TIMES (ns)
10
125
150
t
rr
t
a
t
b
T
C
= 175C, dl
F
/dt = 200A/s
Figure 6. Current Derating Curve
30
5
0
150100 175125
10
15
20
DC
T
C
, CASE TEMPERATURE (
o
C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
25
75
SQ.WAVE
P1-P3P4-P5

RHRP3060

Mfr. #:
Buy RHRP3060
Manufacturer:
ON Semiconductor / Fairchild
Description:
Rectifiers 30A 600V
Lifecycle:
New from this manufacturer.
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