FFPF04H60STU Datasheet FFPF04H60STU | P1-P3

tm

June 2007

FFPF04H60S Hyperfast 2 Rectifier

FFPF04H60S Rev. A

www.fairchildsemi.com1

FFPF04H60S

Hyperfast 2 Rectifier

Features 4A, 600V Hyperfast 2 Rectifier

• High Speed Switching, t

rr

< 45ns

• High Reverse Voltage and High Reliability

• Low Forward Voltage, V

F

< 2.1V @ 4A

• RoHS compliant

Applications

• General Purpose

• Switching Mode Power Supply

• Free-wheeling diode for motor application

• Power switching circuits

The FFPF04H60S is a hyperfast 2 rectifier and silicon nitride

passivated ion-implanted epitaxial planar construction.

This device is intended for use as freewheeling/clamping rectifi-

ers in a variety of switching power supplies and other power

switching applications. Its low stored charge and hyperfast soft

recovery minimize ringing and electrical noise in many power

switching circuits reducing power loss in the switching transis-

tors.

Pin Assignments

1

1. Cathode 2. Anode

2

1. Cathode 2. Anode

TO-220F-2L

Absolute Maximum Ratings T

C

= 25

o

C unless otherwise noted*

Thermal Characteristics

Package Marking

Symbol Parameter Value Units

V

RRM

Peak Repetitive Reverse Voltage 600 V

V

RWM

Working Peak Reverse Voltage 600 V

V

R

DC Blocking Voltage 600 V

I

F(AV)

Average Rectified Forward Current @ T

C

= 115

o

C4 A

I

FSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

40 A

T

J

, T

STG

Operating Junction and Storage Temperature -65 to +150

o

C

Symbol Parameter Ratings Units

R

θJC

Maximum Thermal Resistance, Junction to Case 6.2

o

C/W

Device Marking Device Package Reel Size Tape Width Quantity

F04H60S FFPF04H60STU TO-220F - - 50

*Drain current limited by maximum junction temperature

FFPF04H60S Hyperfast 2 Rectifier

FFPF04H60S Rev. A

www.fairchildsemi.com

2

Electrical Characteristics T

C

= 25

o

C unless otherwise noted

Test Circuit and Waveforms

Parameter Conditions Min. Typ. Max. Units

V

FM

1

I

F

= 4A

I

F

= 4A

T

C

= 25

o

C

T

C

= 125

o

C

-

2.1

1.7

V

I

RM

1

V

R

= 600V

V

R

= 600V

T

C

= 25

o

C

T

C

= 125

o

C

-

100

200

µA

t

rr

I

F

= 1A, di/dt = 100A/µs, V

CC

= 30V

I

F

= 4A, di/dt = 100A/µs, V

CC

= 390V

T

C

= 25

o

C

T

C

= 25

o

C

-

21

33

35

45

ns

I

rr

Q

rr

I

F

= 4A, di/dt = 100A/µs, V

CC

= 390V

T

C

= 25

o

C-

-

1.9

31

-

A

nC

W

AVL

Avalanche Energy (L = 40mH) 4 - - mJ

Notes:

1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%

FFPF04H60S Hyperfast 2 Rectifier

FFPF04H60S Rev. A

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current

vs. Forward Current vs. Reverse Voltage

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time

vs. di/dt

Figure 5. Typical Reverse Recovery Figure 6. Forward Current Derating Curve

Current vs. di/dt

0123

0.1

1

10

T

C

= 75

o

C

T

C

= 125

o

C

Forward Current, I

F

[A]

Forward Voltage, V

F

[V]

T

C

= 25

o

C

20

100 200 300 400 500 600

0.01

0.1

1

10

T

C

= 125

o

C

T

C

= 25

o

C

T

C

=75

o

C

Reverse Current, I

R

[µA]

Reverse Voltage, V

R

[V]

10

0.1 1 10 100

0

10

20

30

40

50

Typical Capacitance

at 0V = 49 pF

Capacitances, Cj [pF]

Reverse Voltage, V

R

[V]

100 200 300 400 500 600

0

20

40

60

80

I

F

= 4A

T

C

= 25

o

C

T

C

= 75

o

C

T

C

= 125

o

C

Reverse Recovery Time, t

rr

[ns]

di/dt [A/µs]

25 50 75 100 125 150

0

3

6

9

12

Average Forward Current, I

F(AV)

[A]

Case temperature, T

C

[

o

C]

DC

100 200 300 400 500 600

0

3

6

9

T

C

= 125

o

C

T

C

= 25

o

C

T

C

= 75

o

C

Reverse Recovery Current, I

rr

[A]

di/dt [A/µs]

I

F

= 4A

FFPF04H60STU

FFPF04H60STU

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