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SQJ886EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ886EP
www.vishay.com
Vishay Siliconix
S12-3129-Rev. A, 07-Jan-13
1
Document Number: 62790
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
() at V
GS
= 10 V 0.0045
R
DS(on)
() at V
GS
= 4.5 V 0.0055
I
D
(A) 60
Configuration Single
D
G
S
N-Channel MOSFET
4
6.15 mm
PowerPAK
®
SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ886EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
60
A
T
C
= 125 °C 45
Continuous Source Current (Diode Conduction) I
S
50
Pulsed Drain Current
a
I
DM
240
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
36
Single Pulse Avalanche Energy E
AS
64 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
55
W
T
C
= 125 °C 18
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
70
°C/W
Junction-to-Case (Drain) R
thJC
2.7
SQJ886EP
www.vishay.com
Vishay Siliconix
S12-3129-Rev. A, 07-Jan-13
2
Document Number: 62790
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1
μA V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 250
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 15.3 A - 0.0036 0.0045
V
GS
= 4.5 V I
D
= 13.8 A - 0.0045 0.0055
V
GS
= 10 V I
D
= 15.3 A, T
J
= 125 °C - - 0.0072
V
GS
= 10 V I
D
= 15.3 A, T
J
= 175 °C - - 0.0088
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15.3 A - 105 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz
- 2338 2922
pF Output Capacitance C
oss
- 356 445
Reverse Transfer Capacitance C
rss
- 147 184
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 20 A
-4365
nC Gate-Source Charge
c
Q
gs
-8-
Gate-Drain Charge
c
Q
gd
-7-
Gate Resistance R
g
f = 1 MHz 1.25 2.45 5
Turn-On Delay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-812
ns
Rise Time
c
t
r
-1725
Turn-Off Delay Time
c
t
d(off)
-2944
Fall Time
c
t
f
-69
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 240 A
Forward Voltage V
SD
I
F
= 10.1 A, V
GS
= 0 - 0.8 1.2 V
SQJ886EP
www.vishay.com
Vishay Siliconix
S12-3129-Rev. A, 07-Jan-13
3
Document Number: 62790
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
14
28
42
56
70
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
40
80
120
160
200
0 6 12 18 24 30
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
700
1400
2100
2800
3500
0 10 20 30 40
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
14
28
42
56
70
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
= 125 °C
T
C
= 25 °C
0.000
0.002
0.004
0.006
0.008
0.010
0 14 28 42 56 70
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 10 20 30 40 50
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 20A
V
DS
= 20 V
P1-P3P4-P6P7-P9P10-P11

SQJ886EP-T1_GE3

Mfr. #:
Buy SQJ886EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 60A 55W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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