AOD3T40P

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 1 2 3 4 5
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0.1
1
10
100
1000
0.1 1 10 100 1000
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=320V
I
D
=2A
0.01
0.1
1
10
1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0
0.1
0.2
0.3
0.4
0.5
0.6
0 100 200 300 400 500
Eoss(uJ)
V
DS
(Volts)
Figure 9: Coss stored Energy
E
oss
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150
Current rating I
D
(A)
T
CASE
(
°
C)
Figure 12: Current De-rating (Note F)
Area (Note F)
0
10
20
30
40
50
0 25 50 75 100 125 150
Power Dissipation (W)
T
CASE
(°C)
Figure 11: Power De-rating (Note B)
Rev.1.0: August 2014 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
0
100
200
300
400
500
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note G)
T
J(Max)
=150°C
T
A
=25°C
0
200
400
600
800
1000
1E-05 0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-
Case (Note F)
T
J(Max)
=150°C
T
C
=25°C
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev.1.0: August 2014 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
t
rr
Rev.1.0: August 2014 www.aosmd.com Page 6 of 6

AOD3T40P

Mfr. #:
Manufacturer:
Description:
MOSFET NCH 400V 2A TO252
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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