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IS65C256AL-25TLA3

P1-P3P4-P6P7-P9P10-P12
4 Integrated Silicon Solution, Inc.
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 8 pF
cout OutputCapacitance Vout = 0V 10 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vdd=5.0V.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-25 ns -45 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
Icc1 VddOperating Vdd = Max.,CE = VIl Com. — 15 — 15 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 20 — 20
Auto. — 25 — 25
Icc2 VddDynamicOperating Vdd = Max.,CE = VIl Com. — 25 — 20 mA
Supply Current Iout = 0 mA, f = fmax Ind. — 30 — 25
Auto. — 35 — 30
typ.
(2)
15 12
Isb1 TTLStandbyCurrent Vdd = Max., Com. — 100 — 100
µA
(TTLInputs) VIn = VIh or VIl Ind. — 120 — 120
CE ≥ VIh, f = 0 Auto. — 150 — 150
Isb2 CMOSStandby Vdd = Max., Com. — 15 — 15
µA
Current(CMOSInputs) CE ≥ Vdd – 0.2V, Ind. — 20 — 20
VIn ≥ Vdd – 0.2V, or Auto. — 50 — 50
VIn ≤ 0.2V, f = 0 typ.
(2)
5 5
Note:
1. At f = f
max, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=5.0V,Ta = 25
o
Candnot100%tested.
Integrated Silicon Solution, Inc. 5
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
Figure 1. Figure 2.
480 Ω
5 pF
Including
jig and
scope
255 Ω
OUTPUT
5V
AC TEST LOADS
AC TEST CONDITIONS
Parameter Unit
InputPulseLevel 0Vto3.0V
InputRiseandFallTimes 3ns
InputandOutputTiming 1.5V
andReferenceLevels
OutputLoad SeeFigures1and2
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(OverOperatingRange)
-25 ns -45 ns
Symbol Parameter Min. Max. Min. Max. Unit
trc ReadCycleTime 25 — 45 — ns
taa AddressAccessTime — 25 — 45 ns
toha OutputHoldTime 2 — 2 — ns
tacs CEAccessTime — 25 — 45 ns
tdoe OEAccessTime — 13 — 25 ns
tlzoe
(2)
OEtoLow-ZOutput 0 — 0 — ns
thzoe
(2)
OEtoHigh-ZOutput 0 12 0 20 ns
tlzcs
(2)
CEtoLow-ZOutput 3 — 3 — ns
thzcs
(2)
CEtoHigh-ZOutput 0 12 0 20 ns
tPu
(3)
CEtoPower-Up 0 — 0 — ns
tPd
(3)
CEtoPower-Down — 20 — 30 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0to3.0Vand
outputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not100%tested.
1838 Ω
100 pF
Including
jig and
scope
993 Ω
OUTPUT
5V
6 Integrated Silicon Solution, Inc.
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
READ CYCLE NO. 2
(1,3)
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CE =
VIl.
3. AddressisvalidpriortoorcoincidentwithCELOWtransitions.
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACS
t
LZCS
t
HZOE
HIGH-Z
DATA VALID
ADDRESS
OE
CE
D
OUT
t
HZCS
CS_RD2.eps
P1-P3P4-P6P7-P9P10-P12

IS65C256AL-25TLA3

Mfr. #:
Buy IS65C256AL-25TLA3
Manufacturer:
ISSI
Description:
SRAM 256K (32Kx8) 25ns 5V Async SRAM
Lifecycle:
New from this manufacturer.
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