4 Integrated Silicon Solution, Inc.
Rev. E
07/20/2015
IS65C256AL
IS62C256AL
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
cIn Input Capacitance VIn = 0V 8 pF
cout OutputCapacitance Vout = 0V 10 pF
Notes:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
2. Testconditions:T
a = 25°c, f=1MHz,Vdd=5.0V.
POWER SUPPLY CHARACTERISTICS
(1)
(OverOperatingRange)
-25 ns -45 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
Icc1 VddOperating Vdd = Max.,CE = VIl Com. — 15 — 15 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 20 — 20
Auto. — 25 — 25
Icc2 VddDynamicOperating Vdd = Max.,CE = VIl Com. — 25 — 20 mA
Supply Current Iout = 0 mA, f = fmax Ind. — 30 — 25
Auto. — 35 — 30
typ.
(2)
15 12
Isb1 TTLStandbyCurrent Vdd = Max., Com. — 100 — 100
µA
(TTLInputs) VIn = VIh or VIl Ind. — 120 — 120
CE ≥ VIh, f = 0 Auto. — 150 — 150
Isb2 CMOSStandby Vdd = Max., Com. — 15 — 15
µA
Current(CMOSInputs) CE ≥ Vdd – 0.2V, Ind. — 20 — 20
VIn ≥ Vdd – 0.2V, or Auto. — 50 — 50
VIn ≤ 0.2V, f = 0 typ.
(2)
5 5
Note:
1. At f = f
max, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatV
dd=5.0V,Ta = 25
o
Candnot100%tested.