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IXFY5N50P3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
Fig. 7. Input Admittance
0
1
2
3
4
5
6
7
3.03.54.04.55.05.56.06.57.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
012345678
I
D
- Amperes
g
f s
- Siemens
125
o
C
25
o
C
T
J
= - 40
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
14
16
0.30.40.50.60.70.80.91.01.1
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
01234567
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 2.5A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
100μs
1ms
R
DS(on)
Limit
25μs
© 2018 IXYS CORPORATION, All Rights Reserved
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
IXYS REF: F_5N50P3(K2) 3-23-12
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 13. Maximum Transient Thermal Impedance
aaaaaa
2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY5N50P3 IXFA5N50P3
IXFP5N50P3
TO-220 OutlineTO-252 Outline TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
2
3
4
L3
A2
A1
e
c
e
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
1 - Gate
2,4 - Drain
3 - Source
E1
E
A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e
c
e1
e1
3X b2
e
3X b
EJECTOR
PIN
P1-P3P4-P6

IXFY5N50P3

Mfr. #:
Buy IXFY5N50P3
Manufacturer:
Littelfuse
Description:
MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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