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IXXK100N60B3H1

P1-P3P4-P6P7-P7
© 2011 IXYS CORPORATION, All Rights Reserved
XPT
TM
600V
GenX3
TM
w/ Diode
IXXK100N60B3H1
IXXX100N60B3H1
V
CES
= 600V
I
C90
= 100A
V
CE(sat)
≤ ≤
≤ ≤
≤
1.80V
t
fi(typ)
= 150ns
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C ( Chip Capability ) 190 A
I
LRMS
Terminal Current Limit 120 A
I
C90
T
C
= 90°C 100 A
I
F110
T
C
= 110°C 65 A
I
CM
T
C
= 25°C, 1ms 370 A
I
A
T
C
= 25°C 50 A
E
AS
T
C
= 25°C 600 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 2Ω I
CM
= 200 A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
t
sc
V
GE
= 15V, V
CE
= 360V, T
J
= 150°C 10 μs
(SCSOA) R
G
= 10Ω, Non Repetitive
P
C
T
C
= 25°C 695 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in.
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
DS100285A(10/11)
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.5 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 50 μA
T
J
= 125°C 4 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 70A, V
GE
= 15V, Note 1 1.50 1.80 V
T
J
= 150°C 1.77 V
Features
z
Optimized for 10-30kHz Switching
z
Square RBSOA
z
Avalanche Rated
z
Short Circuit Capability
z
Anti-Parallel Ultra Fast Diode
z
High Current Handling Capability
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Preliminary Technical Information
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60B3H1
IXXX100N60B3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 22 40 S
C
ie
s
4860 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 475 pF
C
res
83 pF
Q
g
143 nC
Q
ge
I
C
= 70A, V
GE
= 15V, V
CE
= 0.5 • V
CES
37 nC
Q
gc
60 nC
t
d(on)
30 ns
t
ri
70 ns
E
on
1.9 mJ
t
d(off)
120 ns
t
fi
150 ns
E
of
f
2.0 2.8 mJ
t
d(on)
32 ns
t
ri
60 ns
E
on
2.3 mJ
t
d(off)
150 ns
t
fi
200 ns
E
off
2.8 mJ
R
thJC
0.18 °C/W
R
thCS
0.15 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Inductive load, T
J
= 150°C
I
C
= 70A, V
GE
= 15V
V
CE
= 360V, R
G
= 2Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 60A, V
GE
= 0V, Note 1 1.6 2.0 V
T
J
= 150°C 1.4 1.8 V
I
RM
8.3 A
t
rr
140 ns
R
thJC
0.30 °C/W
I
F
= 60A, V
GE
= 0V, T
J
= 100°C
-di
F
/dt = 200A/μs, V
R
= 300V
Inductive load, T
J
= 25°C
I
C
= 70A, V
GE
= 15V
V
CE
= 360V, R
G
= 2Ω
Note 2
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247
TM
Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2011 IXYS CORPORATION, All Rights Reserved
IXXK100N60B3H1
IXXX100N60B3H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
9V
11V
7V
6V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
11V
13V
12V
8V
7V
9V
14V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
10V
8V
9V
7V
5V
11V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 70A
I
C
= 35A
I
C
= 140A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 140
A
T
J
= 25ºC
70
A
35
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= 150ºC
25ºC
- 40ºC
P1-P3P4-P6P7-P7

IXXK100N60B3H1

Mfr. #:
Buy IXXK100N60B3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked
Lifecycle:
New from this manufacturer.
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