2PA1015GR,126

DATA SHEET
Product specification
Supersedes data of 1999 Apr 08
2004 Oct 11
DISCRETE SEMICONDUCTORS
2PA1015
PNP general purpose transistor
b
ook, halfpage
M3D186
2004 Oct 11 2
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
FEATURES
Low current (max. 150 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a plastic TO-92; SOT54 package.
NPN complement: 2PC1815.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
2PA1015Y SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
2PA1015GR
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−50 V
V
CEO
collector-emitter voltage open base −−50 V
V
EBO
emitter-base voltage open collector −−5V
I
C
collector current (DC) −−150 mA
I
CM
peak collector current −−200 mA
I
BM
peak base current −−200 mA
P
tot
total power dissipation T
amb
25 °C; note 1 500 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
ambient temperature 65 +150 °C
2004 Oct 11 3
Philips Semiconductors Product specification
PNP general purpose transistor 2PA1015
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
=0 A −−−100 nA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
=0 A −−−100 nA
h
FE
DC current gain V
CE
= 6 V; I
C
= 2mA
2PA1015Y 120 240
2PA1015GR 200 400
h
FE
DC current gain V
CE
= 6 V; I
C
= 150 mA 25 −−
V
CEsat
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA −−−300 mV
V
BEsat
base-emitter saturation voltage I
C
= 100 mA; I
B
= 10 mA −−−1.1 V
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
= 0 A; f = 1 MHz 47pF
f
T
transition frequency V
CB
= 10 V; I
C
= 1 mA; f = 100 MHz 80 −−MHz
F noise figure V
CE
= 5 V; I
C
= 200 µA; R
S
=2k;
f = 1 kHz; B = 200 Hz
−−10 dB

2PA1015GR,126

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PNP 50V 0.15A TO-92
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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