Vishay Siliconix
Si5447DC
Document Number: 71256
S09-0129-Rev. C, 02-Feb-09
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.076 at V
GS
= - 4.5 V
- 4.8
0.110 at V
GS
= - 2.5 V
- 4.0
0.160 at V
GS
= - 1.8 V
- 3.3
Ordering Information: Si5447DC-T1-E3 (Lead (Pb)-free)
Si5447DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
1206-8 ChipFET
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
BG XX
Lot Traceability
and Date Code
Part #
Code
®
S
G
D
P-Channel MOSFE
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 4.8 - 3.5
A
T
A
= 85 °C
- 3.5 - 2.5
Pulsed Drain Current
I
DM
- 15
Continuous Source Current
a
I
S
- 2.1 - 1.1
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.3
W
T
A
= 85 °C
1.3 0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
43 50
°C/W
Steady State 83 95
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
14 20