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ZXTNS618MCTA

P1-P3P4-P6P7-P9P10-P10
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
1 of 10
www.diodes.com
June 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
ZXTNS618MC
20V NPN LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Features and Benefits
NPN Transistor
• BV
CEO
> 20V
• I
C
= 4.5A Continuous Collector Current
• Low Saturation Voltage (150mV max @ 1A)
• R
SAT
= 47mΩ for a low equivalent On-Resistance
• h
FE
characterized up to 6A for high current gain hold up
Schottky Diode
• BV
R
> 40V
• I
FAV
= 3A Average Peak Forward Current
• Low V
F
< 500mV (@1A) for reduced power loss
• Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications
R
θJA
efficient, 40% lower than SOT26
6mm
2
footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic, “Green” Molding Component
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTNS618MCTA BS1 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Marking Information
Equivalent Circuit
Top View
Bottom View
DFN3020B-8
NPN Transistor
Schottky Diode
Bottom View
Pin-Out
n/c = Not Connected internally
BS1 = Product type marking code
Top view, dot denotes pin 1
K2
A2
K2 K2 C1 C1
A2 n/c E1 B1
K2 C1
Pin 1
C
1
E1
B1
BS1
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
2 of 10
www.diodes.com
June 2011
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Diodes Incorporated
ZXTNS618MC
NPN - Maximum Ratings @ T
A
= 25°C unless otherwise specified
Parameter Symbol Limit Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
20
Emitter-Base Voltage
V
EBO
7
Peak Pulse Current
I
CM
12
A
Continuous Collector Current
(Notes 4 and 7)
I
C
4.5
(Notes 5 and 7) 5
Base Current
I
B
1
NPN - Thermal Characteristics @ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
P
D
1.5
12
W
mW/°C
(Notes 5 & 7)
2.45
19.6
(Notes 6 & 7)
1.13
8
(Notes 6 & 8)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
R
θ
JA
83.3
°C/W
(Notes 5 & 7) 51.0
(Notes 6 & 7) 111
(Notes 6 & 8) 73.5
Thermal Resistance, Junction to Lead (Note 9)
R
θ
JL
17.1
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTNS618MC
Document Number DS31933 Rev. 4 - 2
3 of 10
www.diodes.com
June 2011
© Diodes Incorporated
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Diodes Incorporated
ZXTNS618MC
NPN - Thermal Characteristics
0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
8sqcm 2oz Cu
One active die
Single Pulse
100us
100ms
1s
V
CE(S AT)
Limited
1ms
Safe Operating Area
T
amb
=25°C
DC
10ms
I
C
Collector Current (A)
V
CE
Collector-Emitter Voltage (V)
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
8sqcm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
1oz copper
Two active die
1oz copper
One active die
2oz copper
One active die
2oz copper
Two active die
Thermal Resistance v Board Area
Thermal Resistance (°C/W)
Board Cu Area (sqcm)
1oz copper
Two active die
2oz copper
Two active die
1oz copper
One active die
2oz copper
One active die
Power Dissipation v Board Area
T
amb
=25°C
T
j max
=150°C
Continuous
P
D
Dissipation (W)
Board Cu Area (sqcm)
P1-P3P4-P6P7-P9P10-P10

ZXTNS618MCTA

Mfr. #:
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Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 20V NPN Low AAT 40V 1A Schottky Dual
Lifecycle:
New from this manufacturer.
Delivery:
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