SPEC NO: DSAB5565 REV NO: V.13 DATE: MAR/29/2011 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: J.Yu ERP: DSAB5565
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Min. Typ.
SA10-21EWA High Efficiency Red (GaAsP/GaP) WHITE DIFFUSED 14000 23000
Common Anode, Rt.
Hand Decimal
Description
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength High Efficiency Red 627
nm I
F=20mA
λD [1] Dominant Wavelength High Efficiency Red 625
nm I
F=20mA
Δλ1/2 Spectral Line Half-width High Efficiency Red 45
nm I
F=20mA
C Capacitance High Efficiency Red 15
pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
Per Segment Or (DP)
High Efficiency Red
4.0
(2.0)
5.0
(2.5)
V I
F=20mA
I
R
Reverse Current
Per Segment Or (DP)
High Efficiency Red
10
(10)
uA
V
R=5V
(V
R=5V)
Parameter High Efficiency Red Units
Power dissipation
Per Segment Or (DP)
150
(75)
mW
DC Forward Current
Per Segment Or (DP)
30
(30)
mA
Peak Forward Current [1]
Per Segment Or (DP)
160
(160)
mA
Reverse Voltage
Per Segment Or (DP)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
