MC100LVEP111
www.onsemi.com
8
Figure 5. Typical MC100LVEP111 Phase Noise Plot at f
Carrier
= 156.25 MHz, V
CC
= 3.3 V, 255C
The above phase noise data was captured using Agilent
E5052A/B. The data displays the input phase noise and
output phase noise used to calculate the additive phase jitter
at a specified integration range. The additive RMS phase
jitter contributed by the device (integrated between 12 kHz
and 20 MHz) is 53 fs. The additive RMS phase jitter
performance of the fanout buffer is highly dependent on the
phase noise of the input source.
To obtain the most precise additive phase noise
measurement, it is vital that the source phase noise be
notably lower than that of the DUT. If the phase noise of the
source is greater than the noise floor of the device under test,
the source noise will dominate the additive phase jitter
calculation and lead to an incorrect negative result for the
additive phase noise within the integration range. The
Figure above is a good example of the MC100LVEP111
source generator phase noise having a significantly lower
floor than the DUT and results in an additive phase jitter of
53 fs.
Additive RMS phase jitter = √RMS phase jitter of output
2
− RMS phase jitter of input
2
53 fs + 138.18 fs
2
* 127.59 fs
2
Ǹ
Figure 5 was created with measured data from
Agilent−E5052B Signal Source Analyzer using ON
Semiconductor Phase Noise Explorer web tool. This free
application enables an interactive environment for advanced
phase noise and jitter analysis of timing devices and clock
tree designs. To see the performance of MC100LVEP111
beyond conditions outlined in this datasheet, please visit the
ON Semiconductor Green Point Design Tools homepage.
