PESDXS2UQ_SER_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 26 January 2010 3 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
5. Limiting values
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured across either pins 1 and 3 or pins 2 and 3.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power t
p
=8/20μs
[1][2]
-150W
I
PP
peak pulse current t
p
=8/20μs
[1][2]
PESD3V3S2UQ - 15 A
PESD5V0S2UQ - 15 A
PESD12VS2UQ - 5 A
PESD15VS2UQ - 5 A
PESD24VS2UQ - 3 A
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S2UQ - 30 kV
PESD5V0S2UQ - 30 kV
PESD12VS2UQ - 30 kV
PESD15VS2UQ - 30 kV
PESD24VS2UQ - 23 kV
PESDxS2UQ series MIL-STD-883
(human body model)
-10kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
