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STL72

P1-P3P4-P6P7-P9P10-P10
September 2009 Doc ID 11299 Rev 3 1/10
10
STL72
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
Application
■ Compact fluorescent lamps (CFLs)
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STL series is designed for use in compact
fluorescent lamps.
Figure 1. Internal schematic diagram
TO-92 TO-92AP
Table 1. Device summary
Order codes
(1)
Marking
(2)
Package Packaging
STL72 L72 L or L72 H TO-92 Bulk
STL72-AP L72 L or L72 H TO-92AP Ammopack
STL72G-AP L72G L or L72G H TO-92AP Ammopack
1. The letter "G" in the order code suffix identifies the product as ECOPACK®2 grade, please see Section 3 for details.
2. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Electrical ratings STL72
2/10 Doc ID 11299 Rev 3
1 Electrical ratings
Table 2. Absolute maximum ratings
Table 3. Thermal data
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage (I
C
= 0) 9 V
I
C
Collector current 1 A
I
CM
Collector peak current (t
P
< 5 ms) 2 A
I
B
Base current 0.5 A
I
BM
Base peak current (t
P
< 5 ms) 1 A
P
TOT
Total dissipation at T
c
= 25 °C 1 W
T
stg
Storage temperature -65 to 150
°C
T
J
Max. operating junction temperature 150
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case__________max 125 °C/W
Obsolete Product(s) - Obsolete Product(s)
STL72 Electrical characteristics
Doc ID 11299 Rev 3 3/10
2 Electrical characteristics
T
C
= 25 °C; unless otherwise specified
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T
C
= 125 °C
1
5
mA
mA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 9 V 1 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter sustaining
voltage (I
B
= 0)
I
C
= 1 mA 400 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= 0.2 A I
B
= 40 mA
I
C
= 0.4 A I
B
= 80 mA
0.15
0.25
0.4
0.5
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 0.4 A I
B
= 80 mA 0.95 1.1 V
h
FE
(2)
2. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
DC current gain
I
C
= 0.4 A V
CE
= 5 V
Group L
Group H
I
C
= 1 A V
CE
= 10 V
10
15
5
16
23
15
t
f
Inductive Load
Fall time
I
C
= 0.25 A _ V
clamp
= 300 V
I
B1
= -I
B2
= 50 mA
L
= 3 mH Figure 9
0.3 µs
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P10

STL72

Mfr. #:
Buy STL72
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT POWER TRANSISTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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