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1N5767

P1-P3P4-P4
1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex lters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
owing in the diode. These current controlled resistors are
specied for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned lters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specication is patterned after RS-296-D.
Outline 15
Maximum Ratings
Junction Operating and
Storage Temperature Range .........................-65°C to +150°C
Power Dissipation 25°C ................................................. 250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ......................................same as V
BR
Maximum Soldering Temperature ............... 260°C for 5 sec
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
2
Mechanical Specications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead nish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restricted so that the bend starts at least 1/16 inch (1.6 mm)
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specications at T
A
= 25°C
Maximum Minimum Maximum
Part Total Breakdown Residual Series Eective Carrier Reverse Recovery
Number Capacitance Voltage Resistance Lifetime Time
5082- C
T
(pF) V
BR
(V) R
S
(Ω) τ (ns) t
rr
(ns)
General Purpose Switching and Attenuating
3001 0.25 200 1.0 100 (min.) 100 (typ.)
3039 0.25 150 1.25 100 (min.) 100 (typ.)
1N5719 0.3** 150 1.25 100 (min.) 100 (typ.)
3077 0.3 200 1.5 100 (min.) 100 (typ)
Band Switching
3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.)
Test V
R
= 50 V V
R
= V
BR
I
F
=100 mA I
F
= 50 mA I
F
= 20 mA
Conditions *V
R
= 20 V Measure *I
F
= 20 mA I
R
= 250 mA V
R
= 10 V
**V
R
= 100 V I
R
≤ 10 µA **I
F
= 10 mA *I
F
= 10 mA 90% Recovery
f = 1 MHz f = 100 MHz *I
R
= 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specications at T
A
= 25°C
Max.
Max. High Low Dierence
Eective Min. Residual Max. Resistance Resistance in
Carrier Breakdown Series Total Limit, R
H
(Ω) Limit, R
L
(Ω) Resistance
Part Lifetime Voltage Resistance Capacitance vs. Bias
Number τ (ns) V
BR
(V) R
S
(Ω) C
T
(pF) Min. Max. Min. Max. Slope, Dc
5082-3080 1300 (typ.) 100 2.5 0.4 1000 8**
1N5767* 1300 (typ.) 100 2.5 0.4 1000 8**
5082-3379 1300 (typ.) 50 0.4 8**
5082-3081 2500 (typ.) 100 3.5 0.4 1500 8**
Test I
F
= 50 mA V
R
= V
BR
, I
F
= 100 mA V
R
= 50 V I
F
= 0.01 mA I
F
= 1.0 mA Batch
Conditions I
R
= 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz I
F
= 20 mA** Matched at
I
R
≤ 10 µA f = 100 MHz I
F
= 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specications: τ = 1.0 msec minimum
I
R
= 1 µA maximum at V
R
= 50 V
V
F
= 1 V maximum at I
F
= 100 mA.
3
Typical Parameters at T
A
= 25°C (unless otherwise noted)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
10,000
1000
100
10
1
0.1
RF RESISTANCE (OHMS)
0.001 0.01 0.1
1
10 100
5082-3001
5082-3039
5082-3077
IN5719
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward
Voltage.
5082-3001, 3039,
3077, 3080
IN5719
125°C
25°C
–60°C
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
I
F
– FORWARD BIAS CURRENT (mA)
100,000
10,000
1000
100
10
1
RF RESISTANCE (OHMS)
0.001 0.01 0.1
1
10 100
5082-3080
5082-3379
5082-3081
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
1.0
.5
0
CAPACITANCE (pF)
0 10 20
30
40 50 60 70
Figure 5. Typical Capacitance vs.
Reverse Voltage.
5082-3001
3039
3077
IN5719
5082-3039
IN5719
5082-3001
REVERSE VOLTAGE (V)
2.5
.5
1.0
1.5
2.0
0
CAPACITANCE (pF)
0 10 20
30
40 50 60 70
5082-3080
5082-3081
5082-3379
5082-3188
Figure 7. Typical Second Order
Intermodulation Distortion.
FREQUENCY (MHz)
0
80
60
40
20
100
BELOW FIRST ORDER (dB)
0 10 20
30
40 50 60 8070
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
5082-3081
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
FORWARD CURRENT (mA)
REVERSE RECOVERY TIME (ns)
0 10 20 30
V
R
= 5V
V
R
= 10V
V
R
= 20V
1000
100
10
5082-3080
5082-3379
Figure 8. Typical Cross Intermodulation
Distortion.
MODULATED FREQUENCY (MHz)
10
70
60
50
40
30
20
80
BELOW FIRST ORDER (dB)
0 10 20
30
40 50 60 8070
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
100% Modulation 15 kHz
40 dB mV Output Levels
5082-3081
5082-3080
5082-3379
P1-P3P4-P4

1N5767

Mfr. #:
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Manufacturer:
Microchip / Microsemi
Description:
PIN Diodes MICROWAVE PIN DIODE
Lifecycle:
New from this manufacturer.
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