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FSB50325S

P1-P3P4-P6P7-P8
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FSB50325S Rev. B
FSB50325S Smart Power Module (SPM®)
May 2007
FSB50325S
Smart Power Module (SPM
®
)
Features
• 250V 1.5A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Surface mounted device package
• Moisture Sensitive Level (MSL) 3
General Description
FSB50325S is a tiny smart power module (SPM
®
) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50325S
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50325S is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol Parameter Conditions Rating Units
V
PN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
250 V
I
D25
Each FRFET Drain Current, Continuous T
C
= 25°C 1.5 A
I
D80
Each FRFET Drain Current, Continuous T
C
= 80°C 1.0 A
I
DP
Each FRFET Drain Current, Peak T
C
= 25°C, PW < 100μs 3.0 A
P
D
Maximum Power Dissipation T
C
= 25°C, Each FRFET 10 W
V
CC
Control Supply Voltage Applied between V
CC
and COM 20 V
V
BS
High-side Bias Voltage Applied between V
B(U)
-U, V
B(V)
-V, V
B(W)
-W 20 V
V
IN
Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V
T
J
Operating Junction Temperature -20 ~ 150 °C
T
STG
Storage Temperature -50 ~ 150 °C
R
θJC
Junction to Case Thermal Resistance
Each FRFET under inverter operating con-
dition (Note 1)
10.2
°C/W
V
ISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Connection pins
to heatsink
1500 V
rms
2 www.fairchildsemi.com
FSB50325S Rev. B
FSB50325S Smart Power Module (SPM®)
Pin Descriptions
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM
®
. External connections should be made as indicated in Fig-
ure 2 and 5.
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
Pin Number Pin Name Pin Description
1 COM IC Common Supply Ground
2 V
B(U)
Bias Voltage for U Phase High Side FRFET Driving
3 V
CC(U)
Bias Voltage for U Phase IC and Low Side FRFET Driving
4 IN
(UH)
Signal Input for U Phase High-side
5 IN
(UL)
Signal Input for U Phase Low-side
6 V
S(U)
Bias Voltage Ground for U Phase High Side FRFET Driving
7 V
B(V)
Bias Voltage for V Phase High Side FRFET Driving
8 V
CC(V)
Bias Voltage for V Phase IC and Low Side FRFET Driving
9 IN
(VH)
Signal Input for V Phase High-side
10 IN
(VL)
Signal Input for V Phase Low-side
11 V
S(V)
Bias Voltage Ground for V Phase High Side FRFET Driving
12 V
B(W)
Bias Voltage for W Phase High Side FRFET Driving
13 V
CC(W)
Bias Voltage for W Phase IC and Low Side FRFET Driving
14 IN
(WH)
Signal Input for W Phase High-side
15 IN
(WL)
Signal Input for W Phase Low-side
16 V
S(W)
Bias Voltage Ground for W Phase High Side FRFET Driving
17 P Positive DC–Link Input
18 U Output for U Phase
19 N
U
Negative DC–Link Input for U Phase
20 N
V
Negative DC–Link Input for V Phase
21 V Output for V Phase
22 N
W
Negative DC–Link Input for W Phase
23 W Output for W Phase
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) V
S(U)
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) V
S(V)
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) V
S(W)
(17) P
(18) U
(19) N
U
(20) N
V
(21) V
(22) N
W
(23) W
3 www.fairchildsemi.com
FSB50325S Rev. B
FSB50325S Smart Power Module (SPM®)
Electrical Characteristics (T
J
= 25°C, V
CC
=V
BS
=15V Unless Otherwise Specified)
Inverter Part (Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Note:
1. For the measurement point of case temperature T
C
, please refer to Figure 3 in page 4.
2. BV
DSS
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
®
. V
PN
should be sufficiently less than this value considering the
effect of the stray inductance so that V
DS
should not exceed BV
DSS
in any case.
3. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-
cuit that is same as the switching test circuit.
Package Marking & Ordering Information
Symbol Parameter Conditions Min Typ Max Units
BV
DSS
Drain-Source Breakdown
Voltage
V
IN
= 0V, I
D
= 250μA (Note 2) 250 - - V
ΔBV
DSS
/
ΔT
J
Breakdown Voltage Tem-
perature Coefficient
I
D
= 250μA, Referenced to 25°C - 0.31 - V
I
DSS
Zero Gate Voltage
Drain Current
V
IN
= 0V, V
DS
= 250V - - 250 μA
R
DS(on)
Static Drain-Source
On-Resistance
V
CC
= V
BS
= 15V, V
IN
= 5V, I
D
= 1.0A - 1.4 1.8 Ω
V
SD
Drain-Source Diode
Forward Voltage
V
CC
= V
BS
= 15V, V
IN
= 0V, I
D
= -1.0A - - 1.2 V
t
ON
Switching Times
V
PN
= 150V, V
CC
= V
BS
= 15V, I
D
= 1.0A
V
IN
= 0V ↔ 5V
Inductive load L=3mH
High- and low-side FRFET switching
(Note 3)
- 1076 - ns
t
OFF
- 660 - ns
t
rr
- 108 - ns
E
ON
- 47 - μJ
E
OFF
- 3.1 - μJ
RBSOA
Reverse-bias Safe Oper-
ating Area
V
PN
= 200V, V
CC
= V
BS
= 15V, I
D
= I
DP
, V
DS
=BV
DSS
,
T
J
= 150°C
High- and low-side FRFET switching (Note 4)
Full Square
Symbol Parameter Conditions Min Typ Max Units
I
QCC
Quiescent V
CC
Current V
CC
=15V, V
IN
=0V Applied between V
CC
and COM - - 160 μA
I
QBS
Quiescent V
BS
Current V
BS
=15V, V
IN
=0V
Applied between V
B(U)
-U,
V
B(V)
-V, V
B(W)
-W
- - 100 μA
UV
CCD Low-side Undervoltage
Protection (Figure 6)
V
CC
Undervoltage Protection Detection Level 7.4 8.0 9.4 V
UV
CCR
V
CC
Undervoltage Protection Reset Level 8.0 8.9 9.8 V
UV
BSD
High-side Undervoltage
Protection (Figure 7)
V
BS
Undervoltage Protection Detection Level 7.4 8.0 9.4 V
UV
BSR
V
BS
Undervoltage Protection Reset Level 8.0 8.9 9.8 V
V
IH
ON Threshold Voltage Logic High Level
Applied between IN and COM
3.0 - - V
V
IL
OFF Threshold Voltage Logic Low Level - - 0.8 V
I
IH
Input Bias Current
V
IN
= 5V
Applied between IN and COM
- 10 20 μA
I
IL
V
IN
= 0V - - 2 μA
Device Marking Device Package Reel Size Packing Type Quantity
FSB50325S FSB50325S SPM23BA 330mm Tape & reel 450
P1-P3P4-P6P7-P8

FSB50325S

Mfr. #:
Buy FSB50325S
Manufacturer:
ON Semiconductor
Description:
IC SMART POWER MOD 1.5A SPM23-BA
Lifecycle:
New from this manufacturer.
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