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IXTP6N100D2
P1-P3
P4-P5
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi
g. 7. N
ormal
ized R
DS(
on)
v
s. Juncti
on Temperatur
e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50
-25
0
25
50
75
100
125
150
T
J
- Degr
ees
Cen
tigr
a
d
e
R
DS
(on)
- N
o
rm
a
liz
e
d
V
GS
= 0V
I
D
= 3A
Fi
g. 8
. R
DS(
on)
N
ormal
i
zed to I
D
= 3A Value
v
s
. Dra
in Cu
rren
t
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0
2
4
6
8
1
01
21
4
I
D
- Am
p
e
re
s
R
DS
(on)
- N
o
rm
a
liz
e
d
V
GS
= 0V
5V
T
J
= 12
5
o
C
T
J
= 25
o
C
Fi
g.
9. Input Admittance
0
2
4
6
8
10
12
14
16
-4.0
-3.5
-3.0
-2
.5
-2.0
-1.5
-1
.0
-0.5
0
.0
0.5
1.0
V
GS
- V
o
lts
I
D
- A
mp
e
re
s
T
J
= 12
5
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fi
g. 10. Transconduct
ance
0
2
4
6
8
10
12
02468
1
0
1
2
1
4
1
6
I
D
- A
m
p
e
re
s
g
f s
-
Siemens
T
J
= - 40
o
C
V
DS
= 30V
25
o
C
125
o
C
Fi
g. 12. Forw
ar
d V
ol
tage Dr
op of I
ntri
nsi
c Di
ode
0
2
4
6
8
10
12
14
16
18
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
- Vo
lts
I
S
- A
mp
e
re
s
T
J
= 125
o
C
V
GS
= -
10V
T
J
= 25
o
C
Fi
g. 11. Breakdow
n and Thr
eshol
d V
ol
tages
v
s. Juncti
on Temper
ature
0.
8
0.
9
1.
0
1.
1
1.
2
1.
3
-50
-25
0
25
50
75
100
125
150
T
J
- Degr
ees Ce
n
tigr
ade
BV /
V
GS(off)
- N
o
rm
a
liz
e
d
V
GS(
o
ff)
@ V
DS
= 25
V
BV
DSX
@ V
GS
= - 5V
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N100D2(6C) 7-15-14-A
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fi
g. 14
. Gate Char
ge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
1
02
0
3
04
05
06
07
08
09
0
1
0
0
Q
G
- N
a
noCou
lombs
V
GS
- V
o
l
ts
V
DS
= 500V
I
D
= 3A
I
G
= 10m
A
Fi
g. 13. C
apaci
tance
10
100
1,0
00
10,000
0
5
10
15
20
25
30
35
40
V
DS
- Vo
lts
Capacit
an
ce -
PicoFar
ad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fi
g. 17
. Maxi
mum Trans
i
ent The
rmal
Impedance
0.0
1
0.
1
1
0.0
001
0.
001
0.
01
0.
1
1
10
Pu
lse W
idt
h
- Secon
ds
Z
(th)J
C
- K / W
Fi
g. 15. Forw
ar
d-Bi
as Safe O
perat
in
g Area
@ T
C
= 2
5
o
C
0.1
1
10
100
10
100
1,0
00
V
DS
- Vo
lts
I
D
-
Amperes
T
J
= 150
o
C
T
C
= 25
o
C
S
i
ng
le
P
ulse
1ms
100
μ
s
R
DS(on)
Limit
10m
s
100m
s
DC
Fi
g. 16. Forw
ar
d-Bi
as Safe O
perat
i
ng Ar
ea
@ T
C
= 7
5
o
C
0.1
1
10
100
10
100
1,
000
V
DS
- Vo
lts
I
D
-
Amperes
25
μ
s
1ms
100
μ
s
R
DS(on)
Limit
10ms
100ms
DC
T
J
= 150
o
C
T
C
= 75
o
C
S
i
ng
le
P
ulse
P1-P3
P4-P5
IXTP6N100D2
Mfr. #:
Buy IXTP6N100D2
Manufacturer:
Littelfuse
Description:
MOSFET N-CH MOSFETS (D2) 1000V 6A
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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