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IXFT50N20

P1-P3P4-P4
1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 200 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 200 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 42N20 42 A
50N20 50 A
58N20 58 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
42N20 168 A
50N20 200 A
58N20 232 A
I
AR
T
C
= 25°C 42N20 42 A
50N20 50 A
58N20 58 A
E
AR
T
C
= 25°C30mJ
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
, 5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 mA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
T
J
= 25°C 200 mA
V
GS
= 0 V T
J
= 125°C1mA
V
DSS
I
D25
R
DS(on)
200 V 42 A 60mW
200 V 50 A 45mW
200 V 58 A 40mW
t
rr
£ 200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power surface mountable package
• High power density
G = Gate, D = Drain,
S = Source, TAB = Drain
(TAB)
S
TO-268 (D3) Case Style
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
91522H (2/98)
(TAB)
2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
42N20 0.060 W
50N20 0.045 W
58N20 0.040 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 20 32 S
C
iss
4400 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 800 pF
C
rss
285 pF
t
d(on)
18 25 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15 20 ns
t
d(off)
R
G
= 1 W (External) 72 90 ns
t
f
16 25 ns
Q
g(on)
190 220 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35 50 nC
Q
gd
95 110 nC
R
thJC
0.42 K/W
R
thCK
(TO-247 and TO-204 Case styles) 0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 42N20 42 A
50N20 50 A
58N20 58 A
I
SM
Repetitive; 42N20 168 A
pulse width limited by T
JM
50N20 200 A
58N20 232 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
T
J
= 25°C 200 ns
T
J
= 125°C 300 ns
Q
RM
T
J
= 25°C 1.5 mC
T
J
= 125°C 2.6 mC
I
RM
T
J
= 25°C19 A
T
J
= 125°C23 A
I
F
= 25A,
-di/dt = 100 A/ms,
V
R
= 100 V
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AE (IXFM) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875
C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063
E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A
2
.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Min. Recommended Footprint
TO-268AA (D
3
PAK)
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
BV
DSS
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
10
20
30
40
50
60
70
80
58N20
42N20
50N20
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0 25 50 75 100 125 150 175
R
DS(on)
- Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
- Volts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
V
DS
- Volts
012345678910
I
D
- Amperes
0
10
20
30
40
50
60
70
80
90
100
6V
5V
T
J
= 25°C
V
GS
= 15V
V
GS
= 10V
I
D
= 25A
V
GS
= 10V
9V
8V
7V
T
J
= 25°C
P1-P3P4-P4

IXFT50N20

Mfr. #:
Buy IXFT50N20
Manufacturer:
Littelfuse
Description:
MOSFET 50 Amps 200V
Lifecycle:
New from this manufacturer.
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