NXP Semiconductors
PMZB380XN
30 V, single N-channel Trench MOSFET
PMZB380XN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 1 August 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C - - 0.1 µAI
GSS
gate leakage current
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C - - 0.1 µA
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 25 °C - 0.38 0.46 Ω
V
GS
= 4.5 V; I
D
= 200 mA; T
j
= 150 °C - 0.57 0.7 Ω
R
DSon
drain-source on-state
resistance
V
GS
= 2.5 V; I
D
= 100 mA; T
j
= 25 °C - 0.55 0.68 mΩ
g
fs
forward
transconductance
V
DS
= 5 V; I
D
= 200 mA; T
j
= 25 °C - 1300 - mS
Dynamic characteristics
Q
G(tot)
total gate charge - 0.65 0.87 nC
Q
GS
gate-source charge - 0.14 - nC
Q
GD
gate-drain charge
V
DS
= 15 V; I
D
= 1 A; V
GS
= 4.5 V;
T
j
= 25 °C
- 0.18 - nC
C
iss
input capacitance - 37 56 pF
C
oss
output capacitance - 8.6 - pF
C
rss
reverse transfer
capacitance
V
DS
= 25 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 5.4 - pF
t
d(on)
turn-on delay time - 6.5 13 ns
t
r
rise time - 9.5 - ns
t
d(off)
turn-off delay time - 14 28 ns
t
f
fall time
V
DS
= 15 V; R
L
= 15 Ω; V
GS
= 4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 5.5 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C - 0.78 1.2 V
V
DS
(V)
0 2.01.50.5 1.0
017aaa710
1.0
1.5
0.5
2.0
2.5
I
D
(A)
0
4.5 V 3.5 V
3 V
1.8 V
2 V
V
GS
= 2.5 V
T
j
= 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
03an65
10
- 4
10
- 5
10
- 3
I
D
(A)
10
- 6
V
GS
(V)
0 1.61.20.4 0.8
min typ max
Fig. 8. Subthreshold drain current as a function of
gate-source voltage
