SSM3J15FU
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15FU
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low ON resistance : R
on
= 12 Ω (max) (@V
GS
= −4 V)
: R
on
= 32 Ω (max) (@V
GS
= −2.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage V
DS
−30 V
Gate-Source voltage V
GSS
±20 V
DC I
D
−100
Drain current
Pulse I
DP
−200
mA
Drain power dissipation (Ta = 25°C) P
D
(Note 1) 150 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
2
× 3)
Marking Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1E
Weight: 0.006g(typ.)
D Q
1 2
3
12
3
Start of commercial production
2002-03
