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VNP35N07-E

P1-P3P4-P6P7-P9P10-P11
VNP35N07
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
March 2004
1
2
3
TO-220
BLOCK DIAGRAM
TYPE V
clamp
R
DS(on)
I
lim
VNP35N07 70 V 0.028 Ω 35 A
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
■ STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP35N07 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
tation and overvoltage clamp protect the chip
in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
1/11
Obsolete Product(s) - Obsolete Product(s)
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
in
= 0) Internally Clamped V
V
in
Input Voltage 18 V
I
D
Drain Current Internally Limited A
I
R
Reverse DC Output Current -50 A
V
esd
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ) 2000 V
P
tot
Total Dissipation at T
c
= 25
o
C 125 W
T
j
Operating Junction Temperature Internally Limited
o
C
T
c
Case Operating Temperature Internally Limited
o
C
T
stg
Storage Temperature -55 to 150
o
C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
CLAMP
Drain-source Clamp
Voltage
I
D
= 200 mA V
in
= 0 607080 V
V
CLTH
Drain-source Clamp
Threshold Voltage
I
D
= 2 mA V
in
= 0 55 V
V
INCL
Input-Source Reverse
Clamp Voltage
I
in
= -1 mA -1 -0.3 V
I
DSS
Zero Input Voltage
Drain Current (V
in
= 0)
V
DS
= 13 V V
in
= 0
V
DS
= 25 V V
in
= 0
50
200
µA
µA
I
ISS
Supply Current from
Input Pin
V
DS
= 0 V V
in
= 10 V 250 500 µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
IN(th)
Input Threshold
Voltage
V
DS
= V
in
I
D
+ I
in
= 1 mA 0.8 3 V
R
DS(on)
Static Drain-source On
Resistance
V
in
= 10 V I
D
= 18 A
V
in
= 5 V I
D
= 18 A
0.028
0.035
Ω
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
V
DS
= 13 V I
D
= 18 A 20 25 S
C
oss
Output Capacitance V
DS
= 13 V f = 1 MHz V
in
= 0 980 1400 pF
VNP35N07
2/11
Obsolete Product(s) - Obsolete Product(s)
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V I
d
= 18 A
V
gen
= 10 V R
gen
= 10 Ω
(see figure 3)
100
350
650
200
200
600
1000
350
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 28 V I
d
= 18 A
V
gen
= 10 V R
gen
= 1000 Ω
(see figure 3)
500
2.7
10
4.3
800
4.2
16
6.5
ns
µs
µs
µs
(di/dt)
on
Turn-on Current Slope V
DD
= 28 V I
D
= 18 A
V
in
= 10 V R
gen
= 10 Ω
60 A/µs
Q
i
Total Input Charge V
DD
= 12 V I
D
= 18 A V
in
= 10 V 100 nC
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SD
(∗) Forward On Voltage I
SD
= 18 A V
in
= 0 1.6 V
t
rr
(∗∗)
Q
rr
(∗∗)
I
RRM
(∗∗)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 18 A di/dt = 100 A/µs
V
DD
= 30 V T
j
= 25
o
C
(see test circuit, figure 5)
250
1
8
ns
µC
A
PROTECTION
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
lim
Drain Current Limit V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
25
25
35
35
45
45
A
A
t
dlim
(∗∗) Step Response
Current Limit
V
in
= 10 V
V
in
= 5 V
35
70
60
140
µs
µs
T
jsh
(∗∗) Overtemperature
Shutdown
150
o
C
T
jrs
(∗∗) Overtemperature Reset 135
o
C
I
gf
(∗∗) Fault Sink Current V
in
= 10 V V
DS
= 13 V
V
in
= 5 V V
DS
= 13 V
50
20
mA
mA
E
as
(∗∗) Single Pulse
Avalanche Energy
starting T
j
= 25
o
C V
DD
= 20 V
V
in
= 10 V R
gen
= 1 KΩ L = 10 mH
2.5 J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
VNP35N07
3/11
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P11

VNP35N07-E

Mfr. #:
Buy VNP35N07-E
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 70V 35A OmniFET
Lifecycle:
New from this manufacturer.
Delivery:
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