VUB116-16NOXT Datasheet VUB116-16NOXT, VUB120-16NOX | P1-P3

VUB116-16NOXT

3~ Rectifier Bridge + Brake Unit + NTC

Standard Rectifier Module

NTC

19+20

1

10+11

~6+7

~4+5

~2+3

8+9 18 17 21+22

12 13

Part number

VUB116-16NOXT

Backside: isolated

Features / Advantages: Applications: Package:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● NTC

● 3~ Rectifier with brake unit

for drive inverters

E2-Pack

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3600

RRM

1600

I120

FSM

700

DAV

V

=

V

A

=

I

3~

Rectifier

CES

1200

Brake

Chopper

I120

CE(sat)

1.8

C25

V

=

V

A

V

=

V

IXYS reserves the right to change limits, conditions and dimensions.

20120207bData according to IEC 60747and per semiconductor unless otherwise specified

VUB116-16NOXT

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.19

R 0.65 K/W

R

min.

120

V

RSM

V

100T = 25°C

VJ

T = °C

VJ

mA1.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

105

P

tot

190 WT = 25°C

C

R K/W0.1

40

1600

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.64

T = 25°C

VJ

150

V

F0

V0.80T = °C

VJ

150

r

F

7.6

mΩ

V1.12T = °C

VJ

I = A

F

V

40

1.70

I = A

F

120

I = A

F

120

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V1600

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

27

j

unction capacitance

V = V;400 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

700

755

1.77

1.73

A

595

645

2.45

2.37

1600

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1700

IXYS reserves the right to change limits, conditions and dimensions.

20120207bData according to IEC 60747and per semiconductor unless otherwise specified

VUB116-16NOXT

T = 125°C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

120

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

84

V

CE(sat)

total power dissipation

390

W

collector emitter leakage current

6.5

V

turn-on delay time

70

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

225

±30

T = 125°C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

2.1

6.05.5

mA

0.6

mA

0.2

500

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

230

nC

t

E

d(on)

r

d(off)

f

on

off

40

ns

250

ns

100

ns

6.8

mJ

8.3

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEK

1200

short circuit safe operating area

µs

SCSOA

10T = 125°C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

300

A

R

thJC

thermal resistance junction to case

0.15

K/W

V

RRM

V1200

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

48

A

C

32

T = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

2.75

V

VJ

1.99T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

0.25

mA

VJ

1T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

1.8

µC

23

A

150

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

-di /dt = A/µs

I = A

F

R

thJC

thermal resistance junction to case

0.9

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = 125°C

VJ

75

3

75

30

10

600

900

400

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink

0.32

K/W

0.3R

thCH

thermal resistance case to heatsink

K/W

Brake IGBT

Brake Diode

600 V

80

nA

IXYS reserves the right to change limits, conditions and dimensions.

20120207bData according to IEC 60747and per semiconductor unless otherwise specified

VUB116-16NOXT

VUB116-16NOXT

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