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XP162A12A6PR-G
Power MOSFET
PRODUCTS PACKAGE ORDER UNIT
XP162A12A6PR SOT-89 1,000/Reel
XP162A12A6PR-G
(*)
SOT-89 1,000/Reel
PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss -20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id -2.5 A
Drain Current (Pulse) Idp -10 A
Reverse Drain Current Idr -2.5 A
Channel Power Dissipation *
Pd 2 W
Channel Temperature Tch 150 ℃
Storage Temperature
Tstg -55~150 ℃
■GENERAL DESCRIPTION
The XP162A12A6PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance
:
Rds(on) = 0.17
Ω
@ Vgs = -4.5V
:
Rds(on) = 0.3
Ω
@ Vgs = -2.5V
Ultra High-Speed Switching
Dribing Voltage : -2.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
■PRODUCT NAME
■
BSOLUTE MAXIMUM RATINGS
■EQUIVALENT CIRCUIT
Ta = 25℃
* When implemented on a ceramic PCB
ETR1126_003
G : Gate
S : Source
D : Drain
2 1
2 x
* x represents production lot number.
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
