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DMG4466SSSL-13

P1-P3P4-P6
DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4466SSSL
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
30V
23m @ V
GS
= 10V
10A
33m @ V
GS
= 4.5V
8A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Low Gate Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMG4466SSSL-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
Top View
Internal Schematic
Top View
D
S
G
DS
D
D
D
S
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
G4466SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
G4466SS
WW
YY
1 4
8 5
G4466SS
WW
YY
e3
DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4466SSSL
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
10
6
A
Pulsed Drain Current (Note 5)
I
DM
60 A
Avalanche Current (Notes 6)
I
AR
16 A
Repetitive Avalanche Energy (Notes 6) L = 0.1mH
E
AR
12.8 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1.42 W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
R
JA
88.4 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
—
— V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
— —
1 A
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.45 2.4 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
—
15
25
23
33
m
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance
|Y
fs
|
—
2.5 — S
V
DS
= 5V, I
D
= 10A
Diode Forward Voltage
V
SD
—
0.69 1 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
478.9
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
96.7
—
pF
Reverse Transfer Capacitance
C
rss
—
61.4
—
pF
Gate Resistance
R
g
0.4 1.1 1.6
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
—
5.0 8
nC
V
DS
= 15V, V
GS
= 10V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g
—
10.5 17
Gate-Source Charge
Q
gs
—
1.8
—
nC
Gate-Drain Charge
Q
gd
—
1.6
—
nC
Turn-On Delay Time
t
D(on)
—
2.9
—
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3, R
L
= 1.5
Turn-On Rise Time
t
r
—
7.9
—
ns
Turn-Off Delay Time
t
D(off)
—
14.6
—
ns
Turn-Off Fall Time
t
f
—
3.1
—
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
3 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4466SSSL
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
5
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 10V
GS
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS
0102015 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
5
0.05
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.04
0.01
0.02
0.03
V = 3.5V
GS
V = 4.5V
GS
V = 10V
GS
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.04
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0.03
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
V = 10V
GS
T = 125°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = 4.5V
I = 5A
GS
D
V = 10V
I = 10A
GS
D
P1-P3P4-P6

DMG4466SSSL-13

Mfr. #:
Buy DMG4466SSSL-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
Lifecycle:
New from this manufacturer.
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