For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 83
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +6 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +15 dBm
Channel Temperature 175 °C
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
0.76 W
Thermal Resistance
(channel to ground paddle)
118.8 ° C/ W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Vdd (V) Idd (mA)
+5.5 92
+5.0 90
+4.5 88
Note: Ampli er will operate over full voltage range shown above
Typical Supply Current vs. Vdd
NOTES:
1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR
2. LEAD AND GROUND PADDLE PLATING: GOLD 40 - 80 MICROINCHES.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PAD BURR LENGTH 0.15mm MAX.
PAD BURR HEIGHT 0.25mm MAX.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC441LH5
v02.0508
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 7 - 15.5 GHz
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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