TLP222A,TLP222A-2
2014-09-01
2
Absolute Maximum Rating
(Ta
=
25°C)
Characteristics Symbol Rating Unit
LED
Forward current I
F
50 mA
Forward current derating (Ta ≥ 25°C) ΔI
F
/°C −0.5 mA/°C
Peak forward current I
FP
1 A
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
Off-state output terminal voltage V
OFF
60 V
On-state
current
TLP222A
I
ON
500 mA
TLP222A-2
One channel
operation
Two channel
operations
Forward
current
derating
(Ta ≥ 25°C)
TLP222A
ΔI
ON
/°C −5.0 mA/°C
TLP222A-2
One channel
operation
Two channel
operations
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to 125 °C
Operating temperature T
opr
−40 to 85 °C
Lead soldering temperature (10 s) T
sol
260 °C
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
(Note 1)
BV
S
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: LED pins are shorted together. Detector pins are also shorted together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage V
DD
⎯ ⎯ 48 V
Forward current I
F
5 7.5 25 mA
On-state current I
ON
⎯ ⎯ 500 mA
Operating temperature T
opr
−20 ⎯ 65 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5 V ⎯ ⎯ 10 μA
Capacitance C
T
V = 0, f = 1 MHz ⎯ 30 ⎯ pF
Detector
Off-state current I
OFF
V
OFF
= 60 V ⎯ ⎯ 1 μA
Capacitance C
OFF
V = 0, f = 1 MHz ⎯ 130 ⎯ pF
