OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK7623-75A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7623-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 6 of 13
NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
V
DS
(V)
0108462
03nb06
80
120
40
160
200
I
D
(A)
0
V
GS
(V) = 20
10
9
8
7
6
5
03nb05
V
GS
(V)
5201510
20
16
24
28
R
DSon
(mΩ)
12
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
I
D
(A)
0806020 40
03nb03
20
10
30
40
g
fs
(S)
0
BUK7623-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 7 of 13
NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nb04
V
GS
(V)
0642
20
30
10
40
50
I
D
(A)
0
T
j
= 175 °C
T
j
= 25 °C
03nb02
Q
G
(nC)
0604020
4
6
2
8
10
V
GS
(V)
0
V
DS
= 14 V
V
DS
= 60 V
T
j
(°C)
−60 180120060
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
I
D
(A)
0 20015050 100
03nb07
30
40
20
50
60
R
DSon
(mΩ)
10
V
GS
(V) = 5
6 7 8 9 10
BUK7623-75A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 2 February 2011 8 of 13
NXP Semiconductors
BUK7623-75A
N-channel TrenchMOS standard level FET
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current; typical values
T
j
(°C)
−60 180120060
03nb25
0.8
1.6
2.4
a
0
03nb08
1000
2000
3000
C
(pF)
0
V
DS
(V)
10
−2
10
2
1010
−1
1
C
iss
C
oss
C
rss
03nb01
V
SD
(V)
0 1.20.80.4
40
20
60
80
I
S
(A)
0
T
j
= 25 °C
T
j
= 175 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7623-75A,118

Mfr. #:
Buy BUK7623-75A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet