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MDD312-16N1

P1-P3P4-P6
MDD312-16N1
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
2.8 x 0.8
10
2
49
45
43
1
2 3
7654
80
92
115
6.2
20 22.5 35 28.5
50
38
18
UL 758, style 3751
52
+0
-1,4
32
+0
-1,9
15
±1
3x M8
2 1 3
Outlines Y1
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MDD312-16N1
0 25 50 75 100 125 1500 100 200 300 400 500
0
100
200
300
400
500
600
0 25 50 75 100 125 150
011
10
5
1
0
6
0.01 0.1 1
2000
4000
6000
8000
1
0000
0 100 200 300 400 500 600
0
250
500
750
1000
1250
1500
1750
t [s]
0 25 50 75 100 125 150
0
100
200
300
400
500
I
FSM
[A]
R L
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
50 Hz
T
VJ
= 150°C
V
R
= 0 V
T
VJ
= 45°C
180 ° sin
120 °
60°
30°
DC
0.6
0.8
0.1
0.2
0.3
0.4
R
thKA
K/W
0.06
2 x MDD312
Circuit
B2U
0.12
0.06
0.04
R
thKA
K/W
0.5
0.08
0.2
0.3
50 1500 100 200
100
300
500
0
200
400
600
50 1500 100 200
0
5
10
15
20
25
t [ms]
I
2
t
[A
2
s]
T
C
[°C]
I
FAVM
[A]
I
FAVM
[A] T
A
[°C]
P
tot
[
W]
I
RM
[A]
di
F
/dt [A/µs]
P
tot
[
W]
I
dAVM
[A] T
A
[°C]
t
rr
[µs]
di
F
/dt [A/µs]
180 ° sin
120 °
60°
30°
DC
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode)
Fig. 5 Typ. peak reverse current
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
Fig. 7 Typ. recovery time t
rr
versus -di
F
/dt
I
F
= 400 A
I
F
= 400 A
T
VJ
= 125°C
V
R
= 600 V
T
VJ
= 125°C
V
R
= 600 V
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
MDD312-16N1
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
Z
thJC
[K/W]
0 25 50 75 100 125 1500 200 400 600 800
0
500
1000
1500
2000
2500
3
0
0
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
3 x M DD 312
Circuit
B6U
0.3
0.2
0.15
0.1
0.06
0.03
0.4
R
thKA
K/W
DC
180°
120°
60°
30°
DC
30°
60°
120°
180°
I
FAVM
[A]
T
A
[°C]
P
tot
[W]
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature
t [s]
t [s]
Z
thJK
[
K/W]
Fig. 9 Transient thermal impedance junction to case (per diode)
F
i
g
.
0
T
r
an
s
i
en
t t
h
e
r
m
a
l
i
m
pe
d
an
c
e
j
u
n
c
t
i
o
n
t
o
h
e
a
t
s
i
n
k
(
p
e
r
d
i
o
d
e
)
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0058 0.00054
2 0.0310 0.09800
3 0.0720 0.54000
4 0.0112 12.0000
Constants for Z
thJK
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0058 0.00054
2 0.0310 0.09800
3 0.0720 0.54000
4 0.0112 12.0000
5 0.0400 12.0000
R
thJC
[K/W]
0.120
0.128
0.135
0.153
0.185
d
DC
180°
120°
60°
30°
R
thJC
for various conduction angles d
:
R
thJK
[K/W]
0.160
0.168
0.175
0.193
0.225
d
DC
180°
120°
60°
30°
R
thJK
for various conduction angles d
:
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20170116iData according to IEC 60747and per semiconductor unless otherwise specified
© 2017 IXYS all rights reserved
P1-P3P4-P6

MDD312-16N1

Mfr. #:
Buy MDD312-16N1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 312 Amps 1600V
Lifecycle:
New from this manufacturer.
Delivery:
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