VS-10ETF06-M3

VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96210
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Glass passivated pellet chip junction
150 °C max operating junction temperature
Low forward voltage drop and short reverse
recovery time
Designed and qualified according to
JEDEC
®
-JESD 47
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
R
200 V, 400 V, 600 V
V
F
at I
F
1.2 V
I
FSM
130 A
t
rr
50 ns
T
J
max. 150 °C
Snap factor 0.6
Package 2L TO-220AC
Circuit configuration Single
Anode
1
3
Cathode
Base
cathode
2
2L TO-220AC
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
200 to 600 V
I
F(AV)
Sinusoidal waveform 10
A
I
FSM
130
t
rr
1 A, 100 A/μs 50 ns
V
F
10 A, T
J
= 25 °C 1.2 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK REVERSE
VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-10ETF02-M3 200 300
3VS-10ETF04-M3 400 500
VS-10ETF06-M3 600 700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 128 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 110
10 ms sine pulse, no voltage reapplied 130
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 60
A
2
s
10 ms sine pulse, no voltage reapplied 85
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 850 A
2
s
VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
2
Document Number: 96210
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.2 V
Forward slope resistance r
t
T
J
= 150 °C
23.5 m
Threshold voltage V
F(TO)
0.85 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 3.0
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 A
pk
25 A/μs
25 °C
200 ns
Reverse recovery current I
rr
2.75 A
Reverse recovery charge Q
rr
0.32 μC
Snap factor S0.6
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance
junction to case
R
thJC
DC operation 1.5
°C/W
Maximum thermal resistance
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 2L TO-220AC (JEDEC)
10ETF02
10ETF04
10ETF06
VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
3
Document Number: 96210
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
130
125
150
0
6
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
428
140
60°30° 90° 180°
10 12
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
145
135
Conduction angle
120
120°
Ø
130
125
120
150
010
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
6
212
140
16
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
145
135
Ø
Conduction period
48 14
60°
30° 180°90°
120°
DC
4
0
16
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
8
10
10
10ETF.. Series
T
J
= 150 °C
12
8
46
180°
RMS limit
Conduction angle
2
2
6
14
60°
30°
90°
120°
Ø
4
0
20
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
12
12
16
10ETF.. Series
T
J
= 150 °C
16
8
Ø
Conduction period
DC
48
60°
30°
180°
90°
120°
RMS limit
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
110100
20
30
40
50
60
70
80
90
100
110
120
VS-10ETF.. Series
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.01 0.1 1 10
10
30
50
70
90
110
130
150
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
VS-10ETF.. Series

VS-10ETF06-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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