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MRF9085LSR5

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ARCHIVE INFORMATION
MRF9085LR3 MRF9085LSR3
4-1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common - source amplifier
applications in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 700 mA
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: -45.0 dBc @ 30 kHz BW
1.98 MHz: -60.0 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
- 0.5, +65 Vdc
Gate- Source Voltage V
GS
- 0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
250
1.43
W
W/°C
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
0.7 °C/W
Document Number: MRF9085
Rev. 11, 5/2006
Freescale Semiconductor
Technical Data
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI- 780
MRF9085LR3
CASE 465A- 06, STYLE 1
NI- 780S
MRF9085LSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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4-2
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model MRF9085LR3
MRF9085LSR3
M2 (Minimum)
M1 (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300 µAdc)
V
GS(th)
2.0 — 4.0 Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
V
GS(Q)
— 3.7 — Vdc
Drain- Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
— 0.19 0.4 Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
g
fs
— 8.0 — S
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 73 — pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.9 — pF
1. Part is internally input matched. (continued)
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MRF9085LR3 MRF9085LSR3
4-3
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two -Tone Common- Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
G
ps
17 17.9 — dB
Two -Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η 36 40 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL — -21 -9 dB
Two -Tone Common- Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
G
ps
— 17.9 — dB
Two -Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
η — 40.0 — %
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IMD — -31 — dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 700 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz)
IRL — -16 — dB
Power Output, 1 dB Compression Point, CW
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 880.0 MHz)
P
1dB
— 105 — W
Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
G
ps
— 17.5 — dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W CW, I
DQ
= 700 mA,
f1 = 880.0 MHz)
η — 51 — %
Power Output, 1 dB Compression Point, CW
(1)
(V
DD
= 26 Vdc, I
DQ
= 700 mA,
f1 = 960 MHz)
P
1dB
— 105 — W
1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2.
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MRF9085LSR5

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Manufacturer:
NXP Semiconductors
Description:
FET RF 65V 880MHZ NI-780S
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