2001 Sep 10 3
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC847BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 45 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W