FDS7066N3

February 2004
2004 Fairchild Semiconductor Corporation
FDS7066N3 Rev B2 (W)
FDS7066N3
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
DS(ON)
in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
23 A, 30 V R
DS(ON)
= 5.5 m @ V
GS
= 10 V
R
DS(ON)
= 6.5 m @ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
45
36
27
18
Bottom-side
Drain Contact
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±16
V
I
D
Drain Current – Continuous (Note 1a) 23 A
Pulsed 60
P
D
Power Dissipation for Single Operation
(Note 1a) 3.0
(Note 1b)
1.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 40
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 0.5
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS7066N3 FDS7066N3 13’’ 12mm 2500 units
FDS7066N3
FDS7066N3 Rev B2 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 16 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –16 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.5 3 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4.3
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 23 A
V
GS
= 4.5 V, I
D
= 21 A
V
GS
= 10 V, I
D
= 23 A, T
J
= 125°C
4.4
5.2
6.0
5.5
6.5
8.0
m
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 23 A 116 S
Dynamic Characteristics
C
iss
Input Capacitance 4973 pF
C
oss
Output Capacitance 826 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
341 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 12 22 ns
t
r
Turn–On Rise Time 8 16 ns
t
d(off)
Turn–Off Delay Time 85 136 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
25 40 ns
Q
g
Total Gate Charge 43 69 nC
Q
gs
Gate–Source Charge 13 nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 23 A,
V
GS
= 5.0 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.5 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.5 A (Note 2) 0.7 1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 40°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7066N3
FDS7066N3 Rev B2 (W)
Typical Characteristics
0
10
20
30
40
50
60
0 0.25 0.5 0.75 1 1.25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
2.5V
3.0V
4.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 102030405060
I
D
, DIRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
10V
3.5V
4.0V
4.5V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 23A
V
GS
= 10V
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 11.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1.5 2 2.5 3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7066N3

FDS7066N3

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET 30V N-Ch PowerTrench
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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