RSS100N03
Transistor
2/3
zThermal resistance (Ta=25°C)
°C / W
Rth (ch-a) 62.5
Parameter
Symbol Limits Unit
Channel to ambient
∗
Mounted on a ceramic board.
∗
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−−10 µAV
GS
=20V, V
DS
=0V
V
DD
15V
Typ. Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
30 −−VI
D
=1mA, V
GS
=0V
Drain-source breakdown voltage
I
DSS
−−10 µAV
DS
=30V, V
GS
=0V
Zero gate voltage drain current
V
GS (th)
1.0 − 2.5 V V
DS
=10V, I
D
=1mAGate threshold voltage
− 9.5 13.0 I
D
=±10A, V
GS
=10V
Static drain-source on-starte
resistance
R
DS (on)
− 12.5 17.2 mΩ I
D
=±10A, V
GS
=4.5V
Forward transfer admittance
− 13.5 18.5 I
D
=±10A, V
GS
=4V
Input capacitance
6.0 −−SI
D
=±10A, V
DS
=10V
Output capacitance
C
iss
− 1070 − pF V
DS
=10V
Reverse transfer capacitance
C
oss
− 320
200
− pF V
GS
=0V
Tum-on delay time
C
rss
−
10
− pF f=1MHz
V
GS
=10V
R
L
=3.0Ω
R
GS
=10Ω
Rise time
t
d (on)
−
16
− ns
Tum-off delay time
t
r
−
55
− ns
Fall time
t
d (off)
−
24
− ns
Total gate charge
t
f
−
14
− ns
Gate-source charge
Q
g
−
2.7
− nC
Gate-drain charge
Q
gs
−
5.3
− nC V
GS
=5V
Q
gd
−−nC I
D
=±10A
∗Pulsed
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
I
D
=5A, V
DD
15V
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Forward voltage
V
SD
−−1.2 V I
S
=6.4A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
zElectrical characteristic curves
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
10
CAPACITANCE : C
(pF)
1000
10000
100
Ta=25°C
f=1MHz
V
CE
=0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10 100
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.2 Switching Characteristics
t
d(off)
t
d(on)
t
r
t
f
0246810121416
TOTAL GATE CHARGE : Qg
(nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
V
DD
=15V
I
D
=10A
R
G
=10Ω
Pulsed
Fig.3
Dynamic Input Characteristics