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ZXM64P03XTA

P1-P3P4-P6P7-P7
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
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Product Line o
f
Diodes Incorporated
ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
Max R
DS(on)
Max I
D
T
A
= 25°C
-30V
75mΩ @ V
GS
= -10V
-3.8A
100mΩ @ V
GS
= -4.5V
-3.3A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Features
• Fast switching speed
• Low on-resistance
• Low threshold
• Low gate drive
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: MSOP8
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.028 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXM64P03XTA
ZXM64P03 7 12 1,000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
Equivalent Circuit
ZXM64P03 = Product Type Marking Code
D
S
G
Top View
Pin Out
MSOP8
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
2 of 7
www.diodes.com
October 2012
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Diodes Incorporated
ZXM64P03X
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GS
±20 V
Continuous Drain Current
V
GS
= 4.5V
T
A
= +25°C (Note 5)
T
A
= +70°C (Note 5)
I
D
-3.8
-3.0
A
Pulsed Drain Current (Note 7)
I
DM
-1.9 A
Continuous Source Current (Body Diode) (Note 6)
I
S
-2.3 A
Pulsed Source Current (Body Diode) (Note 7)
I
SM
-19 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor
P
D
1.1
8.8
W
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
P
D
1.8
14.4
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
113 °C/W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
70 °C/W
Thermal Resistance, Junction to Ambient (Note 8)
R
JL
39.8 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t 10 secs.
7. Repetitive rating pulse width limited by pulse current limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the Drain lead).
Thermal Characteristics
ZXM64P03X
Document Number DS33487 Rev. 2 - 2
3 of 7
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ZXM64P03X
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
(
th
)
-1.0
⎯ ⎯
V
I
D
= -250μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9)
R
DS (ON)
⎯ ⎯
75
m
V
GS
= -10V, I
D
= -2.4A
100
V
GS
= -4.5V, I
D
= -1.2A
Forward Transconductance (Notes 9 and 11)
g
fs
2.3
⎯ ⎯
S
V
DS
= -10V, I
D
= -1.2A
Diode Forward Voltage (Note 9)
V
SD
⎯ ⎯
-0.95 V
T
J
= +25°C, I
S
= -2.4A, V
GS
= 0V
Reverse Recovery Time (Note 11)
t
r
r
⎯
30.2
⎯
ns
T
J
= +25°C, I
F
= -2.4A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 11)
Q
r
r
⎯
27.8
⎯
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯
825
⎯
pF
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
250
⎯
Reverse Transfer Capacitance
C
rss
⎯
80
⎯
Turn-On Delay Time (Note 10)
t
d
(
on
)
⎯
4.4
⎯
ns
V
DD
= -15V, I
D
= -2.4A,
R
G
= 6.2, R
D
= 6.2
(Refer to test circuit)
Turn-On Rise Time (Note 10)
t
r
⎯
6.2
⎯
Turn-Off Delay Time (Note 10)
t
d
(
off
)
⎯
40
⎯
Turn-Off Fall Time (Note 10)
t
f
⎯
29.2
⎯
Total Gate Charge (Note 10)
Q
g
⎯ ⎯
46
nC
V
DS
= -24V, V
GS
= -10V,
I
D
= -2.4A
(Refer to test circuit)
Gate-Source Charge (Note 10)
Q
s
⎯
⎯
9
Gate-Drain Charge (Note 10)
Q
g
d
⎯ ⎯
11.5
Notes: 9. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
P1-P3P4-P6P7-P7

ZXM64P03XTA

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Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V P Chnl HDMOS
Lifecycle:
New from this manufacturer.
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