TPH11003NL
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 0.1 mA
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5.5 A
Min
30
15
1.3
Typ.
12.6
9.4
Max
±0.1
10
2.3
16
11
Unit
µA
V
mΩ
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
r
g
t
r
t
on
t
f
t
off
Test Condition
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
See Fig. 6.2.1
Min
Typ.
510
18
300
1.3
2.1
7.5
1.9
13.5
Max
660
50
2.0
Unit
pF
Ω
ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Q
g
Q
gs1
Q
gd
Q
SW
Test Condition
V
DD
≈ 15 V, V
GS
= 10 V, I
D
= 11 A
V
DD
≈ 15 V, V
GS
= 4.5 V, I
D
= 11 A
V
DD
≈ 15 V, V
GS
= 10 V, I
D
= 11 A
Min
Typ.
7.5
3.3
2.0
1.0
2.0
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
(Note 6)
Symbol
I
DRP
V
DSF
Test Condition
I
DR
= 11 A, V
GS
= 0 V
Min
Typ.
Max
63
-1.2
Unit
A
V
Note 6: Ensure that the channel temperature does not exceed 150 .
2014-02-17
Rev.2.0