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VSMY2853G

P1-P3P4-P6P7-P8
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 27-Mar-14
1
Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLight
TM
portfolio, the VSMY2853 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
•3D TV
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• Peak wavelength: λ
p
= 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: ϕ = ± 28°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2503X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
22689
VSMY2853RG
2268
9
VSMY2853G
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) ϕ (deg) λ
p
(nm) t
r
(ns)
VSMY2853RG 35 ± 28 850 10
VSMY2853G 35 ± 28 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY2853RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VSMY2853G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 27-Mar-14
2
Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature acc. figure 7, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21890
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21891
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.65 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
2.9 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
-1.45 mV/K
I
F
= 10 mA TK
VF
-1.3 mV/K
Reverse current I
R
not designed for reverse operation μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
20 35 50 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
300 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
55 mW
Temperature coefficient of radiant
power
I
F
= 100 mA TKφ
e
-0.35 %/K
Angle of half intensity ϕ ± 28 deg
Peak wavelength I
F
= 100 mA λ
p
840 850 870 nm
Spectral bandwidth I
F
= 30 mA Δλ 30 nm
Temperature coefficient of λ
p
I
F
= 30 mA TKλ
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
10 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
10 ns
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 27-Mar-14
3
Document Number: 83480
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
t
p
= 100 µs
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
0.001 0.01 0.1 1
0.1
1
10
100
1000
t
p
= 100 µs
λ - Wavelength (nm)
21776-1
Φ
e, rel
- Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
I
F
= 30 mA
22688
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
P1-P3P4-P6P7-P8

VSMY2853G

Mfr. #:
Buy VSMY2853G
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power 5volt 190mW 840nM 28Deg
Lifecycle:
New from this manufacturer.
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