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5-644759-2

P1-P3P4-P6P7-P9P10-P12P13-P13
February 2007 Rev 11 1/13
13
STD40NF03L
N-channel 30V - 0.0090Ω - 40A - DPAK
Low gate charge STripFET™ II Power MOSFET
General features
■ Logic level device
■ Optimal R
DS(on)
x Q
g
trade-off
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold drive
Description
This application specific Power MOSFET is the
third generation of STMicroelectronics unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STD40NF03L 30V <0.011Ω 40A
DPAK
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD40NF03LT4 D40NF03L DPAK Tape & reel
Contents STD40NF03L
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD40NF03L Electrical ratings
3/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 30 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)30V
V
GS
Gate- source voltage ± 20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C 40 A
I
D
Drain current (continuous) at T
C
= 100°C 28 A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 160 A
P
tot
Total dissipation at T
C
= 25°C 80 W
Derating Factor 0.53 W/°C
dv/dt
(3)
3. I
SD
≤40A, di/dt ≤350A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 5.5 V/ns
E
AS
(4)
4. Starting T
j
= 25 °C, I
D
= 20A, V
DD
= 25V
Single pulse avalanche energy 850 mJ
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 1.88 °C/W
Rthj-amb Thermal resistance junction-ambient max 100 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
P1-P3P4-P6P7-P9P10-P12P13-P13

5-644759-2

Mfr. #:
Buy 5-644759-2
Manufacturer:
TE Connectivity / AMP Connectors
Description:
Headers & Wire Housings 22P MTA156 HDR ASSY STR LF
Lifecycle:
New from this manufacturer.
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