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FFSH30120A

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 1
1 Publication Order Number:
FFSH30120A/D
FFSH30120A
Silicon Carbide Schottky
Diode
1200 V, 30 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 361 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
www.onsemi.com
TO−247−2LD
CASE 340CL
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH30120A = Specific Device Code
$Y&Z&3&K
FFSH
30120A
1. Cathode 2. Anode
1
2
FFSH30120A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 1200 V
E
AS
Single Pulse Avalanche Energy (Note 1) 361 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 155°C 30
A
Continuous Rectified Forward Current @ T
C
< 135°C 46
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
1500 A
T
C
= 150°C, 10 ms
1400 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 230 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 80 A
Ptot Power Dissipation
T
C
= 25°C 500 W
T
C
= 150°C 83 W
T
J
, T
STG
Operating and Storage Temperature Range −55 to +175 °C
TO247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 361 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 38 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 0.3 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 30 A, T
C
= 25°C − 1.45 1.75
V
I
F
= 30 A, T
C
= 125°C − 1.7 2.0
I
F
= 30 A, T
C
= 175°C − 2.0 2.4
I
R
Reverse Current
V
R
= 1200 V, T
C
= 25°C − − 200 mA
V
R
= 1200 V, T
C
= 125°C − − 300
V
R
= 1200 V, T
C
= 175°C − − 400
Q
C
Total Capacitive Charge V = 800 V − 175 − nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz − 1740 −
pF
V
R
= 400 V, f = 100 kHz − 159 −
V
R
= 800 V, f = 100 kHz − 130 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH30120A FFSH30120A TO−247−2LD
(Pb-Free)
30 Units / Tube
FFSH30120A
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Capacitive Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
10
5
0
0.0 0.5 1.0 1.5 2.0
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
I
F
, PEEK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (5C)
100
0
25 50 75 100 125 150 175
P
TOT
, POWER DISSIPATION (W)
100
0
25 50 75 100 125 150 175
T
C
, CASE TEMPERATURE (5C)
V
R
, REVERSE VOLTAGE (V)
40
0
0 200 400 600 800
Q
C
, CAPACITIVE CHARGE (nC)
2.5
T
J
= −55°C
T
J
= 25°C
T
J
= 75°C
T
J
= 175°C
T
J
= 125°C
15
20
25
30
200
300
400
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
200
300
400
500
600
80
120
160
200
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
0
10
−9
10
−8
10
−7
10
−6
10
−5
10
−4
200 400 600 800 1000 1200
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 175°C
T
J
= −55°C
CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0.1
10
1 10 100 800
100
1000
10000
P1-P3P4-P6P7-P8

FFSH30120A

Mfr. #:
Buy FFSH30120A
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1200V 30A SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
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