Microsemi
Linfinity Microelectronics Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
Copyright © 2001
Rev. 1.2a,2004-06-10
WWW.Microsemi .COM
AudioMAX™ LX1721 / 1722
Class-D Stereo Power Amplifier Controller
INTEGRATED PRODUCTS
ELECTRICAL CHARACTERISTICS (CONTINUED)
LX1721 / 1722
Parameter Symbol Test Conditions
Min Typ Max
Units
Current Limit Comparator
Voltage Sense Threshold 190 210 230 mV
Blanking Pulse Delay 500 ‘ns
Response Time Excluding blanking pulse 250 ‘ns
I
UM
Pulses required to Current Limit
Latch
4 4 4 ‘cycles
Consecutive Clear Pulses required to
reset I
UM
counter
2 2 2 ‘cycles
Reference Voltage Section
Initial Accuracy (VREF) 5.0
Voltage Stability (VREF) ± 50 ± 100 ‘mV
Initial Accuracy (V25) 2.5
Voltage Stability (V25) ± 25 ± 50 mV
Temperature Stability T
A
= 0
O
C to 70
O
C 2 5 ‘mV
Line Regulation V
DD
= 9V to 15V 0.5 ‘mV
Load Regulation I
OUT
= 0 to 10mA 5 ‘mV
Under Voltage Lockout Section
Start Threshold Voltage 6 V
UV Lockout Hysteresis 250 mV
UVLO Delay To Output Enable 62,500 clkcyc
Supply Current
Sleep Current
SLEEP Input = 0V, T
A
= 25
O
C
30
µA
Operating Current
SLEEP Input = 2V, V
IN
= 15V,
No MOSFETs connected
8 11 ‘mA
Sleep to Output Enable 62,500 clkcyc
Sleep Threshold 1.45 1.6 1.75 V
Mute Section
Mute Threshold 1.2 1.35 1.5 V
Output Drivers For N-Channel MOSFETs
I
SINK
= 3mA 30 100 ‘mV
NFET Drivers, Low Level Voltage V
OL
I
SINK
= 100mA 0.3 1.0 V
I
SOURCE
= 3mA, C
N
= 5.2V
applied externally
30 100 ‘mV
NFET Drivers, High Level Voltage V
OH
I
SOURCE
= 100mA, C
N
= 5.2V
applied externally
0.3 1.0 V
Output Drives For P-Channel MOSFETs
I
SINK
= 3mA 30 100 ‘mV
PFET Drivers, Low Level Voltage V
OL
I
SINK
= 100mA 0.5 1.0 V
I
SOURCE
= 3mA, C
P
= 5.2V
(applied externally)
30 100 ‘mV
PFET Drivers, High Level Voltage V
OH
I
SOURCE
= 100mA, C
P
= 5.2V
(applied externally)
0.5 1.0 V
Note 2: The LX1721 / 22CDB is guaranteed to meet performance specifications from 0° to 70°C. Specifications over the -20° to 0°C operation temperature
range are assured by design, characterization, and statistical process control.
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S